531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
Enya, Yohei, Yoshizumi, Yusuke, Kyono, Takashi, Akita, Katsushi, Ueno, Masaki, Adachi, Masahiro, Sumitomo, Takamichi, Tokuyama, Shinji, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.08.2009)
Published in Applied physics express (01.08.2009)
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Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Yoshizumi, Yusuke, Adachi, Masahiro, Enya, Yohei, Kyono, Takashi, Tokuyama, Shinji, Sumitomo, Takamichi, Akita, Katsushi, Ikegami, Takatoshi, Ueno, Masaki, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.09.2009)
Published in Applied physics express (01.09.2009)
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Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
Akita, Katsushi, Kyono, Takashi, Yoshizumi, Yusuke, Kitabayashi, Hiroyuki, Katayama, Koji
Published in Journal of applied physics (01.02.2007)
Published in Journal of applied physics (01.02.2007)
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Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors
Arikata, Suguru, Kyono, Takashi, Miura, Kouhei, Balasekaran, Sundararajan, Inada, Hiroshi, Iguchi, Yasuhiro, Sakai, Michito, Katayama, Haruyoshi, Kimata, Masafumi, Akita, Katsushi
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
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High carrier concentration in high Al-composition AlGaN-channnel HEMTs
Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Ueno, Masaki, Nakamura, Takao, Yafune, Norimasa, Sakuno, Keiichi, Tokuda, Hirokuni, Kuzuhara, Masaaki, Takeda, Kenichiro, Iwaya, Motoaki, Amano, Hiroshi
Published in Physica status solidi. C (01.02.2012)
Published in Physica status solidi. C (01.02.2012)
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Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates
Kyono, Takashi, Hirayama, Hideki, Akita, Katsushi, Nakamura, Takao, Adachi, Masahiro, Ando, Koshi
Published in Journal of applied physics (01.06.2006)
Published in Journal of applied physics (01.06.2006)
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Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates
Kyono, Takashi, Hirayama, Hideki, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji
Published in Journal of applied physics (01.12.2005)
Published in Journal of applied physics (01.12.2005)
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Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
Akita, Katsushi, Nakamura, Takao, Hirayama, Hideki
Published in Japanese Journal of Applied Physics (01.12.2004)
Published in Japanese Journal of Applied Physics (01.12.2004)
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High-efficiency UV LEDs using quaternary InAlGaN
Hirayama, Hideki, Kyono, Takashi, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji
Published in Electrical engineering in Japan (30.11.2006)
Published in Electrical engineering in Japan (30.11.2006)
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