531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
Enya, Yohei, Yoshizumi, Yusuke, Kyono, Takashi, Akita, Katsushi, Ueno, Masaki, Adachi, Masahiro, Sumitomo, Takamichi, Tokuyama, Shinji, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.08.2009)
Published in Applied physics express (01.08.2009)
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Journal Article
Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Yoshizumi, Yusuke, Adachi, Masahiro, Enya, Yohei, Kyono, Takashi, Tokuyama, Shinji, Sumitomo, Takamichi, Akita, Katsushi, Ikegami, Takatoshi, Ueno, Masaki, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.09.2009)
Published in Applied physics express (01.09.2009)
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Journal Article
Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors
Arikata, Suguru, Kyono, Takashi, Miura, Kouhei, Balasekaran, Sundararajan, Inada, Hiroshi, Iguchi, Yasuhiro, Sakai, Michito, Katayama, Haruyoshi, Kimata, Masafumi, Akita, Katsushi
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
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Journal Article
High carrier concentration in high Al-composition AlGaN-channnel HEMTs
Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Ueno, Masaki, Nakamura, Takao, Yafune, Norimasa, Sakuno, Keiichi, Tokuda, Hirokuni, Kuzuhara, Masaaki, Takeda, Kenichiro, Iwaya, Motoaki, Amano, Hiroshi
Published in Physica status solidi. C (01.02.2012)
Published in Physica status solidi. C (01.02.2012)
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Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
Akita, Katsushi, Nakamura, Takao, Hirayama, Hideki
Published in Japanese Journal of Applied Physics (01.12.2004)
Published in Japanese Journal of Applied Physics (01.12.2004)
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Journal Article
High-efficiency UV LEDs using quaternary InAlGaN
Hirayama, Hideki, Kyono, Takashi, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji
Published in Electrical engineering in Japan (30.11.2006)
Published in Electrical engineering in Japan (30.11.2006)
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Journal Article
MOVPE growth for photodiodes in 2.5 mu m region with InGaAs/GaAsSb type-II quantum wells
Fujii, Kei, Ishizuka, Takashi, Nagai, Youichi, Iguchi, Yasuhiro, Akita, Katsushi
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Ueno, Masaki, Nakamura, Takao, Takeda, Kenichiro, Iwaya, Motoaki, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.03.2012)
Published in Physica status solidi. A, Applications and materials science (01.03.2012)
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