Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETs
Tsunomura, T, Nishida, A, Hiramoto, T
Published in IEEE transactions on electron devices (01.02.2011)
Published in IEEE transactions on electron devices (01.02.2011)
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Journal Article
Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array
Hiramoto, T., Suzuki, M., Song, X., Shimizu, K., Saraya, T., Nishida, A., Tsunomura, T., Kamohara, S., Takeuchi, K., Mogami, T.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements
Shimizu, Yasuo, Takamizawa, Hisashi, Inoue, Koji, Yano, Fumiko, Kudo, Shuichi, Nishida, Akio, Toyama, Takeshi, Nagai, Yasuyoshi
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
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Journal Article
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
Kunimune, Yorinobu, Shimada, Yasuhiro, Sakurai, Yusuke, Inoue, Masao, Nishida, Akio, Han, Bin, Tu, Yuan, Takamizawa, Hisashi, Shimizu, Yasuo, Inoue, Koji, Yano, Fumiko, Nagai, Yasuyoshi, Katayama, Toshiharu, Ide, Takashi
Published in AIP advances (01.04.2016)
Published in AIP advances (01.04.2016)
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Journal Article
Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography
Takamizawa, Hisashi, Shimizu, Yasuo, Inoue, Koji, Nozawa, Yasuko, Toyama, Takeshi, Yano, Fumiko, Inoue, Masao, Nishida, Akio, Nagai, Yasuyoshi
Published in Applied physics express (01.10.2016)
Published in Applied physics express (01.10.2016)
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Journal Article
Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot
Tsunomura, Takaaki, Nishida, Akio, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Effect of channel dopant uniformity on MOSFET threshold voltage variability
Terada, Kazuo, Sanai, Kazuhiko, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Solid-state electronics (01.03.2012)
Published in Solid-state electronics (01.03.2012)
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Journal Article
Possible Origins of Extra Threshold Voltage Variability in N-Type Field-Effect Transistors by Intentionally Changing Process Conditions and Using Takeuchi Plot
Tsunomura, Takaaki, Yano, Fumiko, Nishida, Akio, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.07.2010)
Published in Japanese Journal of Applied Physics (01.07.2010)
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Journal Article
Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
Putra, Arifin Tamsir, Tsunomura, Takaaki, Nishida, Akio, Kamohara, Shiro, Takeuchi, Kiyoshi, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.06.2009)
Published in Japanese Journal of Applied Physics (01.06.2009)
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Journal Article
High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Measurement of the MOSFET drain current variation under high gate voltage
Terada, Kazuo, Chagawa, Tetsuo, Xiang, Jianyu, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio
Published in Solid-state electronics (01.03.2009)
Published in Solid-state electronics (01.03.2009)
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Journal Article
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Applied physics express (01.11.2010)
Published in Applied physics express (01.11.2010)
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Journal Article