Search Results - "AKASAKI, I" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Evidence for two Mg related acceptors in GaN

Evidence for two Mg related acceptors in GaN

by Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A
Published in Physical review letters (12.06.2009)

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Journal Article

Quasi-ballistic thermal conduction in 6H–SiC

Quasi-ballistic thermal conduction in 6H–SiC

by Cheng, Z., Lu, W., Shi, J., Tanaka, D., Protik, N.H., Wang, S., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Graham, S.
Published in Materials today physics (01.09.2021)

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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

by Okada, N., Kato, N., Sato, S., Sumii, T., Nagai, T., Fujimoto, N., Imura, M., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Maruyama, H., Takagi, T., Noro, T., Bandoh, A.
Published in Journal of crystal growth (2007)

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Journal Article Conference Proceeding

One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

by Iida, D., Miura, A., Okadome, Y., Tsuchiya, Y., Kawashima, T., Nagai, T., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. A, Applications and materials science (01.06.2007)

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Journal Article Conference Proceeding

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

by Okada, N., Kato, N., Sato, S., Sumii, T., Fujimoto, N., Imura, M., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Takagi, T., Noro, T., Bandoh, A.
Published in Journal of crystal growth (01.03.2007)

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Journal Article Conference Proceeding

Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

by Kawashima, T., Nagai, T., Iida, D., Miura, A., Okadome, Y., Tsuchiya, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica Status Solidi (b) (01.06.2007)

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Journal Article Conference Proceeding

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

by Iwaya, M., Kasugai, H., Kawashima, T., Iida, K., Honshio, A., Miyake, Y., Kamiyama, S., Amano, H., Akasaki, I.
Published in Thin solid films (25.10.2006)

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Journal Article Conference Proceeding

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

by Nakano, K., Imura, M., Narita, G., Kitano, T., Hirose, Y., Fujimoto, N., Okada, N., Kawashima, T., Iida, K., Balakrishnan, K., Tsuda, M., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)

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Journal Article Conference Proceeding

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

by Imura, M., Nakano, K., Kitano, T., Fujimoto, N., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Shimono, K., Noro, T., Takagi, T., Bandoh, A.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)

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Journal Article Conference Proceeding

Nitride-based light-emitting solar cell

Nitride-based light-emitting solar cell

by Kuwahara, Y., Fujiyama, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.07.2010)

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Journal Article

High efficiency violet to blue light emission in porous SiC produced by anodic method

High efficiency violet to blue light emission in porous SiC produced by anodic method

by Nishimura, T., Miyoshi, K., Teramae, F., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.10.2010)

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Journal Article

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

by Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.12.2009)

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Journal Article

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

by Sugiyama, T., Iida, D., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.07.2010)

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Journal Article

GaInN/GaN p-i-n light-emitting solar cells

GaInN/GaN p-i-n light-emitting solar cells

by Fujiyama, Y., Kuwahara, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.10.2010)

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Journal Article

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

by KAWASHIMA, T, NAGAI, T, IIDA, D, MIURA, A, OKADOME, Y, TSUCHIYA, Y, IWAYA, M, KAMIYAMA, S, AMANO, H, AKASAKI, I
Published in Journal of crystal growth (2007)

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Conference Proceeding Journal Article

Determination of the conduction band electron effective mass in hexagonal GaN

Determination of the conduction band electron effective mass in hexagonal GaN

by DRECHSLER, M, HOFMANN, D. M, MEYER, B. K, DETCHPROHM, T, AMANO, H, AKASAKI, I
Published in Japanese Journal of Applied Physics (1995)

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Journal Article

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate

by Sugiyama, T., Honda, Y., Yamaguchi, M., Amano, H., Isobe, Y., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Imade, M., Kitaoka, Y., Mori, Y.
Published in Physica status solidi. C (01.03.2012)

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Journal Article

Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer

Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer

by Asai, T., Nonaka, K., Ban, K., Nagata, K., Nagamatsu, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Published in Physica status solidi. C (01.07.2010)

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Journal Article

Growth of high-quality AlN at high growth rate by high-temperature MOVPE

Growth of high-quality AlN at high growth rate by high-temperature MOVPE

by Fujimoto, N., Kitano, T., Narita, G., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Shimono, K., Noro, T., Takagi, T., Bandoh, A.
Published in Physica status solidi. C (01.06.2006)

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Journal Article

Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer

Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer

by Nonaka, K., Asai, T., Ban, K., Yamamoto, J., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Wu, Z. H.
Published in Physica status solidi. C (01.05.2011)

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Journal Article

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