Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Akasaka, Yasushi, Nakamura, Genji, Shiraishi, Kenji, Umezawa, Naoto, Yamabe, Kikuo, Ogawa, Osamu, Lee, Myoungbum, Amiaka, Toshio, Kasuya, Tooru, Watanabe, Heiji, Chikyow, Toyohiro, Ootsuka, Fumio, Nara, Yasuo, Nakamura, Kunio
Published in Japanese Journal of Applied Physics (01.12.2006)
Published in Japanese Journal of Applied Physics (01.12.2006)
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Journal Article
Physics of Metal/High-k Interfaces
Nakayama, Takashi, Shiraishi, Kenji, Miyazaki, Seiichi, Akasaka, Yasushi, Torii, K., Ahmet, Parhat, Ohmori, Kenji, Umezawa, Naoto, Watanabe, Heiji, Chikyow, Toyohiro, Nara, Yasuo, Ohta, Akio, Iwai, H., Yamada, Keisaku, Nakaoka, Takashi
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Photoemission Study of Metal/HfSiON Gate Stack
Miyazaki, Seiichi, Yoshinaga, Hiromichi, Ohta, Akio, Akasaka, Yasushi, Shiraishi, Kenji, Yamada, Keisaku, Inumiya, Seiji, Kadoshima, Masaru, Nara, Yasuo
Published in ECS transactions (09.05.2008)
Published in ECS transactions (09.05.2008)
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Journal Article
Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method
Yoshida, Shiniti, Watanabe, Yasumasa, Kita, Yuuki, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi, Akasaka, Yasushi, Nara, Yasuo, Yamada, Keisaku
Published in Science and technology of advanced materials (01.01.2007)
Published in Science and technology of advanced materials (01.01.2007)
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Journal Article
Experimental Study of 1/f1+α Noise in Transient Leakage Current of Metal-Insulator-Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Experimental Study of 1/f 1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Agglomeration Resistant Self-Aligned Silicide Process Using N 2 Implantation into TiSi 2
Akira Nishiyama, Akira Nishiyama, Yasushi Akasaka, Yasushi Akasaka, Yukihiro Ushiku, Yukihiro Ushiku, Kenji Hishioka, Kenji Hishioka, Yasumasa Suizu, Yasumasa Suizu, Masakazu Shiozaki, Masakazu Shiozaki
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
Nishinohara, Kazumi T., Akasaka, Yasushi, Saito, Tomohiro, Yagishita, Atsushi, Murakoshi, Atsushi, Suguro, Kyoichi, Arikado, Tsunetoshi
Published in Japanese Journal of Applied Physics (2001)
Published in Japanese Journal of Applied Physics (2001)
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Journal Article
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High- K MISFET with p+poly-Si Gates -A Theoretical Approach
Shiraishi, Kenji, Yamada, Keisaku, Torii, Kazuyoshi, Akasaka, Yasushi, Nakajima, Kiyomi, Konno, Mitsuru, Chikyow, Toyohiro, Kitajima, Hiroshi, Arikado, Tsunetoshi
Published in Japanese Journal of Applied Physics (01.11.2004)
Published in Japanese Journal of Applied Physics (01.11.2004)
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