Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology
KENKARE, P. U, MAZURE, C, HAYDEN, J. D, PFIESTER, J. R, KO, J, KIRSCH, H. C, AJURIA, S. A, CRABTREE, P, VUONG, T
Published in IEEE transactions on electron devices (1994)
Published in IEEE transactions on electron devices (1994)
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Furnace grown gate oxynitride using nitric oxide (NO)
Okada, Y., Tobin, P.J., Reid, K.G., Hegde, R.I., Maiti, B., Ajuria, S.A.
Published in IEEE transactions on electron devices (01.09.1994)
Published in IEEE transactions on electron devices (01.09.1994)
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Journal Article
Evaluation of interfacial nitrogen concentration of RTP oxynitrides by reoxidation
OKADA, Y, TOBIN, P. J, LAKHOTIA, V, AJURIA, S. A, HEGDE, R. I, LIAO, J. C, RUSHBROOK, P. P, ARIAS, L. J
Published in Journal of the Electrochemical Society (01.06.1993)
Published in Journal of the Electrochemical Society (01.06.1993)
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Uniformity of the N2O furnace oxynitride process for the formation of thin tunnel dielectrics
OKADA, Y, TOBIN, P. J, REID, K. G, HEGDE, R. I, AJURIA, S. A
Published in Journal of the Electrochemical Society (01.12.1994)
Published in Journal of the Electrochemical Society (01.12.1994)
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Journal Article
Interpretation of ellipsometry measurements taken from annealed heavily arsenic-implanted silicon
AJURIA, S. A, TOMPKINS, H. G, GROVE, C. L, CARREJO, J. P
Published in Journal of the Electrochemical Society (01.09.1993)
Published in Journal of the Electrochemical Society (01.09.1993)
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Journal Article
Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N2O oxynitridation
YEONG-SEUK KIM, OKADA, Y, YEARGAIN, J. R, KO-MIN CHANG, TOBIN, P. J, MORTON, B, CHOE, H, BOWERS, M, KUO, C, CHRUDIMSKY, D, AJURIA, S. A
Published in IEEE electron device letters (01.07.1993)
Published in IEEE electron device letters (01.07.1993)
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Quantitative correlations between the performance of polysilicon emitter transistors and the evolution of polysilicon/silicon interfacial oxides upon annealing
Ajuria, S.A., Gan, C.H., Noel, J.A., Reif, L.R.
Published in IEEE transactions on electron devices (01.06.1992)
Published in IEEE transactions on electron devices (01.06.1992)
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Low-defect-density and high-reliability FETMOS EEPROM' s fabricatedusing furnace N(2)O oxynitridation
Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R
Published in IEEE electron device letters (01.07.1993)
Published in IEEE electron device letters (01.07.1993)
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Journal Article
Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation
Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R
Published in IEEE electron device letters (01.07.1993)
Published in IEEE electron device letters (01.07.1993)
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Journal Article
음극으로서 경질 탄소에 기초한 금속 이온 커패시터 및 양극으로서 활성탄과 희생염의 혼합물
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Year of Publication 24.08.2022
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Year of Publication 24.08.2022
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WEAK LIGHT DETECTION USING AN ORGANIC, PHOTOSENSITIVE COMPONENT
AJURIA ARREGUI JON, TEDDE SANDRO FRANCESCO, ARCA FRANCESCO, SRAMEK MARIA, HAYDEN OLIVER, ZOLI GUIDO
Year of Publication 16.04.2014
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Year of Publication 16.04.2014
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