A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers
Goto, M, Ohta, Y, Aigo, T, Moritani, A
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
Published in IEEE transactions on microwave theory and techniques (01.05.1996)
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Journal Article
Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates
Aigo, T., Goto, M., Ohta, Y., Jono, A., Tachikawa, A., Moritani, A.
Published in IEEE transactions on electron devices (01.04.1996)
Published in IEEE transactions on electron devices (01.04.1996)
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Journal Article
Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
Aigo, Takashi, Kanaya, Masatoshi, Katsuno, Masakazu, Yashiro, Hirokatsu, Ohtani, Noboru
Published in Japanese Journal of Applied Physics (2001)
Published in Japanese Journal of Applied Physics (2001)
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Journal Article
Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers
Ohtani, Noboru, Ushio, Shoji, Kaneko, Tadaaki, Aigo, Takashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Ohashi, Wataru
Published in Journal of electronic materials (01.08.2012)
Published in Journal of electronic materials (01.08.2012)
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Journal Article
Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2
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Conference Proceeding
Journal Article
Growth of large high-quality SiC single crystals
Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article
Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals
Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo
Published in Journal of crystal growth (2006)
Published in Journal of crystal growth (2006)
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Journal Article
Step bunching behaviour on the {0 0 0 1} surface of hexagonal SiC
Ohtani, Noboru, Katsuno, Masakazu, Aigo, Takashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Kanaya, Masatoshi
Published in Journal of crystal growth (01.03.2000)
Published in Journal of crystal growth (01.03.2000)
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Journal Article
Surface step model for micropipe formation in SiC
Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Aigo, Takashi, Yashiro, Hirokatsu
Published in Journal of crystal growth (01.06.2001)
Published in Journal of crystal growth (01.06.2001)
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Journal Article
Dislocation processes during SiC bulk crystal growth
Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo
Published in Microelectronic engineering (2006)
Published in Microelectronic engineering (2006)
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Journal Article
Conference Proceeding
Structural properties of subgrain boundaries in bulk SiC crystals
Katsuno, Masakazu, Ohtani, Noboru, Aigo, Takashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Kanaya, Masatoshi
Published in Journal of crystal growth (01.07.2000)
Published in Journal of crystal growth (01.07.2000)
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Journal Article
Growth of large high-quality SiC single crystals
Ohtani, N, Fujimoto, T, Katsuno, M, Aigo, T, Yashiro, H
Published in Journal of crystal growth (30.07.2001)
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Published in Journal of crystal growth (30.07.2001)
Journal Article
Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo
Published in Japanese Journal of Applied Physics (01.03.2006)
Published in Japanese Journal of Applied Physics (01.03.2006)
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Journal Article
Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface
Aigo, Takashi, Fujita, Yasuhisa, Tachikawa, Akiyoshi, Ohta, Yasumitsu
Published in Japanese Journal of Applied Physics (01.05.1999)
Published in Japanese Journal of Applied Physics (01.05.1999)
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Journal Article
Measurement of carrier concentration at the GaAs-Si interface in GaAs on Si by Raman scattering
FUTAGI, T, TACHIKAWA, A, JONO, A, MORIKAWA, Y, AIGO, T, MORITANI, A
Published in Japanese Journal of Applied Physics (01.12.1996)
Published in Japanese Journal of Applied Physics (01.12.1996)
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Journal Article
Improvement of threshold voltage uniformity in ion-implanted GaAs-metal-semiconductor field-effect transistors on Si
MORITANI, A, TACHIKAWA, A, JONO, A, AIGO, T, IKEMATSU, Y, SANO, Y, YAMAGISHI, C, AKIYAMA, M
Published in Japanese Journal of Applied Physics (01.11.1996)
Published in Japanese Journal of Applied Physics (01.11.1996)
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Journal Article
Thermal resistance and electronic characteristics for high electron mobility transistors grown on Si and GaAs substrates by metal-organic chemical vapor deposition
AIGO, T, YASHIRO, H, GOTO, M, JONO, A, TACHIKAWA, A, MORITANI, A
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.12.1993)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.12.1993)
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