RTS noise reduction of 1Y-nm floating gate NAND flash memory using process optimization
Sungho Kim, Myeongwon Lee, Gil-Bok Choi, Jaekwan Lee, Yunbong Lee, Myoungkwan Cho, Kun-Ok Ahn, Jinwoong Kim
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
Challenges and limitations of NAND flash memory devices based on floating gates
Byoungjun Park, Sunghoon Cho, Milim Park, Sukkwang Park, Yunbong Lee, Myoung Kwan Cho, Kun-Ok Ahn, Gihyun Bae, Sungwook Park
Published in 2012 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2012)
Published in 2012 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2012)
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Conference Proceeding
The effect of hydrogen on program disturbance in sub-2ynm Nand flash
Jaewook Yang, Wonhyo Cha, Shinwon Seo, Haesoon Oh, Jeongseob Oh, Hyunyoung Shim, Sekyoung Choi, Byung-Kook Kim, Seokwon Cho, Kiseog Kim, Kun-Ok Ahn, Gihyun Bae
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
NAND Flash reliability degradation induced by HCI in boosted channel potential
Milim Park, Sukkwang Park, Seokwon Cho, Dong-Kyu Lee, YeonJoo Jeong, Chonga Hong, Ho Seok Lee, Myoung Kwan Cho, Kun-Ok Ahn, Yohwan Koh
Published in 2010 IEEE International Reliability Physics Symposium (01.01.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.01.2010)
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Conference Proceeding
Impact of floating gate dry etching on erase characteristics in NOR flash memory
Lee, W.H., Dong-Kyu Lee, Young-Ho Na, Keon-Soo Kim, Kun-Ok Ahn, Kang-Deog Suh, Yonghan Roh
Published in IEEE electron device letters (01.08.2002)
Published in IEEE electron device letters (01.08.2002)
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Journal Article
Coin type energy storage device and method for manufacturing the same
SEO JONG GU, JEONG WON YONG, LEE YUN YEONG, CHO JIN IK, LEE MUN BAE, LEE PIL GYU, AHN KUN OK, KIM JUN HO
Year of Publication 08.07.2024
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Year of Publication 08.07.2024
Patent
Composite electrode and electric energy storage system using the same
SEO JONG GU, JEONG WON YONG, LEE YUN YEONG, CHO JIN IK, LEE MUN BAE, LEE PIL GYU, AHN KUN OK, KIM JUN HO
Year of Publication 27.12.2023
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Year of Publication 27.12.2023
Patent
Electrode stack structure of electric energy storage system and method for stacking thereof
SEO JONG GU, JEONG WON YONG, LEE YUN YEONG, CHO JIN IK, LEE MUN BAE, LEE PIL GYU, AHN KUN OK, KIM JUN HO
Year of Publication 27.12.2023
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Year of Publication 27.12.2023
Patent
Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller
Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae, Yeseok Yang
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices
YeonJoo Jeong, Sangjo Lee, Sunghoon Cho, Pyunghwa Kim, Milim Park, SungPyo Lee, Hyunyoung Shim, Myoung Kwan Cho, Kun-Ok Ahn, Gihyun Bae, Sungwook Park
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
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Conference Proceeding
Influence of plasma edge damage on erase characteristics of NOR flash EEPROM using channel erase method
Dong-Kyu Lee, Lee, W.H., Young-Ho Na, Keon-Soo Kim, Kun-Ok Ahn, Kang-Deog Suh, Yonghan Roh
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
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Conference Proceeding
An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices
Byoungjun Park, Sunghoon Cho, Jiyul Park, Pyunghwa Kim, Sangjo Lee, Milim Park, Min Sang Park, Sukkwang Park, Hae Chang Yang, Sungjo Park, Yunbong Lee, Myoung Kwan Cho, Kun-Ok Ahn, Gihyun Bae, Sungwook Park
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
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Conference Proceeding
Optimization of control gate material and structure for enhancing 20nm 64Gb NAND flash reliability
Hae Soo Kim, Kang Jae Lee, Kwang Hee Han, Seok Won Cho, Se Kyoung Choi, Shin Won Seo, Jae Hyun Chung, Keun Woo Lee, Sung Jae Chung, Keum Hwan Noh, Tae Un Youn, Ju Yeab Lee, Min Kyu Lee, Byeong Il Han, Su Min Yi, Ho Seok Lee, Sung Soon Kim, Wan Sup Shin, Kwang Hyun Yun, Min Sung Ko, Jin Kwan Choi, Sang Wan Lee, Sang Deok Kim, Myung Kyu Ahn, Ki Seog Kim, Young Ho Jeon, Sung Kye Park, Aritome, Seiichi, Jin Woong Kim, Sang Sun Lee, Seok Kiu Lee, Kun Ok Ahn, Sung Joo Hong, Gi Hyun Bae, Sung Wook Park
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
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Conference Proceeding
The Operation Algorithm for Improving the Reliability of TLC (Triple Level Cell) NAND Flash Characteristics
Dong Wook Lee, Sunghoon Cho, Byung Woo Kang, Sukkwang Park, Byoungjun Park, Myoung Kwan Cho, Kun-Ok Ahn, Ye Seok Yang, Sung Wook Park
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Conference Proceeding
13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique
Huh, Hwang, Cho, Wanik, Lee, Jinhaeng, Noh, Yujong, Park, Yongsoon, Ok, Sunghwa, Kim, Jongwoo, Cho, Kayoung, Lee, Hyunchul, Kim, Geonu, Park, Kangwoo, Kim, Kwanho, Lee, Heejoo, Chai, Sooyeol, Kwon, Chankeun, Cho, Hanna, Jeong, Chanhui, Yang, Yujin, Goo, Jayoon, Park, Jangwon, Lee, Juhyeong, Kirr, Heonki, Jo, Kangwook, Park, Cheoljoong, Nam, Hyeonsu, Song, Hyunseok, Lee, Sangkyu, Jeong, Woopyo, Ahn, Kun-Ok, Jung, Tae-Sung
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
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Conference Proceeding
A high performance 64Gb MLC NAND flash memory in 20nm CMOS technology
Jin-Su Park, Byoung-Sung You, Sang-Don Lee, Kwangho Baek, Chun-Woo Jeon, Tai-kyu Kang, Jae-Ho Lee, Min-su Kim, Dae-il Choi, Jae-won Choi, Hyun Jeong, Jong-woo Kim, Eun-seong Jang, Tae-Yun Kim, Chang-Hyuk Lee, Jong-Gi Nam, Bong-Seok Han, Kun-Ok Ahn, Ki-hyun Bae
Published in 2012 IEEE Asian Solid State Circuits Conference (A-SSCC) (01.12.2012)
Published in 2012 IEEE Asian Solid State Circuits Conference (A-SSCC) (01.12.2012)
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Conference Proceeding
The challenges and limitations on triple level cell geometry and process beyond 20 nm NAND Flash technology
Yunbong Lee, Byoungjun Park, DaeHwan Yun, YeonJoo Jeong, Pyoung Hwa Kim, Ji Yul Park, Hae Chang Yang, Myoung Kwan Cho, Kun-Ok Ahn, Yohwan Koh
Published in 2010 IEEE International Memory Workshop (2010)
Published in 2010 IEEE International Memory Workshop (2010)
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Conference Proceeding
Mobile ion-induced data retention failure in NOR flash memory cell
Lee, W.H., Dong-Kyu Lee, Keon-Soo Kim, Kun-Ok Ahn, Kang-Deog Suh
Published in IEEE transactions on device and materials reliability (01.06.2001)
Published in IEEE transactions on device and materials reliability (01.06.2001)
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Magazine Article