Search Results - "ADLERSTEIN MICHAEL" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Cascade amplifier for cable television signals, has two spaced active regions for providing transistor cells, respectively, having transistors in common emitter and common base configuration

Cascade amplifier for cable television signals, has two spaced active regions for providing transistor cells, respectively, having transistors in common emitter and common base configuration

by ZAITLIN MARK P, ADLERSTEIN MICHAEL G
Year of Publication 21.04.2000

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Patent

Cascade amplifier for cable television signals, has two spaced active regions for providing transistor cells, respectively, having transistors in common emitter and common base configuration

Cascade amplifier for cable television signals, has two spaced active regions for providing transistor cells, respectively, having transistors in common emitter and common base configuration

by ADLERSTEIN, MICHAEL G, ZAITLIN, MARK P
Year of Publication 20.04.2000

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Patent

Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors

Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors

by ADLERSTEIN, MICHAEL G, HWANG, KIUCHUL
Year of Publication 16.06.2007

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Patent

SEMICONDUCTOR DEVICE HAVING IMPROVED SCHOTTKY-BARRIER JUNCTION

SEMICONDUCTOR DEVICE HAVING IMPROVED SCHOTTKY-BARRIER JUNCTION

by ADLERSTEIN, MICHAEL G
Year of Publication 09.06.1981

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Patent

MICROWAVE SEMICONDUCTOR DEVICE WITH IMPROVED THERMAL PROPERTIES

MICROWAVE SEMICONDUCTOR DEVICE WITH IMPROVED THERMAL PROPERTIES

by ADLERSTEIN, MICHAEL G
Year of Publication 03.02.1981

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Patent

Semiconductor device having improved Schottky-barrier junction

Semiconductor device having improved Schottky-barrier junction

by ADLERSTEIN, MICHAEL G
Year of Publication 08.04.1980

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Patent

Plural semiconductor devices mounted between plural heat sinks

Plural semiconductor devices mounted between plural heat sinks

by ADLERSTEIN; MICHAEL G
Year of Publication 10.07.1979

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Patent

HALBLEITERBAUELEMENT FUER MIKROWELLENBETRIEB

HALBLEITERBAUELEMENT FUER MIKROWELLENBETRIEB

by GENE ADLERSTEIN,MICHAEL
Year of Publication 22.03.1979

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Patent

HALBLEITERBAUELEMENT MIT SCHOTTKY- SPERRSCHICHTUEBERGANG

HALBLEITERBAUELEMENT MIT SCHOTTKY- SPERRSCHICHTUEBERGANG

by GENE ADLERSTEIN,MICHAEL
Year of Publication 22.03.1979

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Patent

MMIC having back-side multi-layer signal routing

MMIC having back-side multi-layer signal routing

by POZGAY JEROME H, KAZIOR THOMAS E, MCCARROLL CHRISTOPHER P, LARDIZABAL STEVEN M, ADLERSTEIN MICHAEL G
Year of Publication 25.01.2007

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Patent

MMIC HAVING BACK-SIDE MULTI-LAYER SIGNAL ROUTING

MMIC HAVING BACK-SIDE MULTI-LAYER SIGNAL ROUTING

by KAZIOR, THOMAS, E, MCCARROLL, CHRISTOPHER, P, ADLERSTEIN, MICHAEL, G, POZGAY, JEROME, H, LARDIZABAL, STEVEN, M
Year of Publication 18.01.2007

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Patent

Measurement of series resistance in IMPATT diodes

Measurement of series resistance in IMPATT diodes

by Adlerstein, M.G., Holway, L.H., Chu, S.L.G.
Published in IEEE transactions on electron devices (01.02.1983)

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Journal Article

A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

by Huang, J.C., Zaitlin, M., Hoke, W., Adlerstein, M., Lyman, P., Saledas, P., Jackson, G., Tong, E., Flynn, G.
Published in IEEE electron device letters (01.11.1989)

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Journal Article

Heterojunction bipolar transistor

Heterojunction bipolar transistor

by ADLERSTEIN; MICHAEL G, TABATABAIE-ALAVI; KAMAL, ZAITLIN; MARK P
Year of Publication 16.11.1999

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Patent

DE3243307

DE3243307

by ADLERSTEIN, MICHAEL G., WELLESLEY, MASS., US
Year of Publication 09.09.1993

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Patent

Spray etch dicing method

Spray etch dicing method

by ADLERSTEIN; MICHAEL G, SPRAGUE; ROBERT L
Year of Publication 06.03.1979

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Patent

AMPLIFICATEUR CASCODE

AMPLIFICATEUR CASCODE

by ZAITLIN MARK P, ADLERSTEIN MICHAEL G
Year of Publication 04.07.2003

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Patent

Avalanche response time in GaAs as determined from microwave admittance measurements

Avalanche response time in GaAs as determined from microwave admittance measurements

by Adlerstein, M.G., McClymonds, J.W., Statz, H.
Published in IEEE transactions on electron devices (01.07.1981)

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Journal Article

DE2839043

DE2839043

by ADLERSTEIN, MICHAEL GENE, WELLESLEY, MASS., US
Year of Publication 30.10.1986

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Patent

DE2839044

DE2839044

by ADLERSTEIN, MICHAEL GENE, WELLESLEY, MASS., US
Year of Publication 12.06.1986

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Patent

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