A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz
Song, Peter, Oakley, Michael A., Ulusoy, A. Cagri, Kaynak, Mehmet, Tillack, Bernd, Sadowy, Gregory A., Cressler, John D.
Published in IEEE microwave and wireless components letters (01.10.2015)
Published in IEEE microwave and wireless components letters (01.10.2015)
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Journal Article
On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients
Ickhyun Song, Moon-Kyu Cho, Oakley, Michael A., Ildefonso, Adrian, Inchan Ju, Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D.
Published in IEEE transactions on nuclear science (01.05.2017)
Published in IEEE transactions on nuclear science (01.05.2017)
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Journal Article
An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
Ickhyun Song, Raghunathan, Uppili S., Lourenco, Nelson E., Fleetwood, Zachary E., Oakley, Michael A., Seungwoo Jung, Moon-Kyu Cho, Roche, Nicholas J-H, Khachatrian, Ani, Warner, Jeffrey H., Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D.
Published in IEEE transactions on nuclear science (01.04.2016)
Published in IEEE transactions on nuclear science (01.04.2016)
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Journal Article
Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
Zeinolabedinzadeh, Saeed, Ickhyun Song, Raghunathan, Uppili S., Lourenco, Nelson E., Fleetwood, Zachary E., Oakley, Michael A., Cardoso, Adilson S., Roche, Nicolas J.-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki-Amouzou, Pauline, Cressler, John D.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits
Jung, Seungwoo, McMorrow, Dale, Buchner, Stephen P., Melinger, Joseph S., Warner, Jeffrey H., Paki-Amouzou, Pauline, Babcock, Jeff A., Cressler, John D., Lourenco, Nelson E., Song, Ickhyun, Oakley, Michael A., England, Troy D., Arora, Rajan, Cardoso, Adilson S., Roche, Nicolas J.-H., Khachatrian, Ani
Published in IEEE transactions on nuclear science (01.12.2014)
Published in IEEE transactions on nuclear science (01.12.2014)
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Journal Article
The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits
Jung Seungwoo, Ickhyun Song, Fleetwood, Zachary E., Raghunathan, Uppili, Lourenco, Nelson E., Oakley, Michael A., Wier, Brian R., Roche, Nicolas J-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki, Pauline, Cressler, John D.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets
Fleetwood, Zachary E., Wier, Brian R., Raghunathan, Uppili S., Lourenco, Nelson E., Oakley, Michael A., Joseph, Alvin J., Cressler, John D.
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
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Conference Proceeding
Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs
Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.
Published in IEEE transactions on electron devices (01.02.2018)
Published in IEEE transactions on electron devices (01.02.2018)
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Journal Article
On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology
Cardoso, Adilson S., Omprakash, Anup P., Chakraborty, Partha Sarathi, Karaulac, Nedeljko, Fleischhauer, David M., Ildefonso, Adrian, Zeinolabedinzadeh, Saeed, Oakley, Michael A., Bantu, Tikurete G., Lourenco, Nelson E., Cressler, John D.
Published in IEEE transactions on electron devices (01.04.2015)
Published in IEEE transactions on electron devices (01.04.2015)
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Journal Article
On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs
Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.
Published in 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2016)
Published in 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2016)
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Conference Proceeding
Predicting hard failures and maximum usable range of sige HBTs
Perez Martinez, Rafael, Raghunathan, Uppili S., Wier, Brian R., Omprakash, Anup P., Oakley, Michael A., Fleetwood, Zachary E., Cressler, John D.
Published in 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2017)
Published in 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2017)
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Conference Proceeding
On the reliability of SiGe HBT cascode driver amplifiers
Oakley, Michael A., Wier, Brian, Raghunathan, Uppili S., Chakraborty, Partha S., Cressler, John D.
Published in 2014 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2014)
Published in 2014 IEEE Radio Frequency Integrated Circuits Symposium (01.06.2014)
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Conference Proceeding
Practical dihydroxylation and C–C cleavage of unsaturated fatty acids
Oakley, Michael A., Woodward, Simon, Coupland, Keith, Parker, David, Temple-Heald, Clare
Published in Journal of molecular catalysis. A, Chemical (28.12.1999)
Published in Journal of molecular catalysis. A, Chemical (28.12.1999)
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Journal Article
Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents
Raghunathan, Uppili S., Wier, Brian R., Fleetwood, Zachary E., Oakley, Michael A., Jain, Vibhor, Cressler, John D.
Published in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (01.10.2018)
Published in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (01.10.2018)
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Conference Proceeding