130nm InP DHBTs with ft >0.52THz and fmax >1.1THz
Urteaga, M., Pierson, R., Rowell, P., Jain, V., Lobisser, E., Rodwell, M. J. W.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Using dimensionality to achieve a sharp tunneling FET (TFET) turn-on
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Conference Proceeding
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
De Michielis, L., Lattanzio, L., Palestri, P., Selmi, L., Ionescu, A. M.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
III-nitride tunnel diodes with record forward tunnel current density
Krishnamoorthy, S., Pil Sung Park, Rajan, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Bias temperature stress analysis of ZnO thin film transistors with HfO2 gate dielectrics
Siddiqui, J. J., Phillips, J. D., Leedy, K., Bayraktaroglu, B.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Soft, curvilinear semiconductor devices for bio-integrated electronics
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Conference Proceeding
Orientation dependent complex bandstructure of Si1−xGex alloys
Ajoy, A., Murali, K. V. R. M., Karmalkar, S., Laux, S. E.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures
Garlid, E. S., Hu, Q. O., Geppert, C., Chan, M. K., Palmstrom, C. J., Crowell, P. A.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Experimental investigation of scalability and transport in In0.7Ga0.3As multi-gate quantum well FET (MuQFET)
Liu, L., Saripalli, V., Narayanan, V., Datta, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3 gate dielectric
Corrion, A. L., Chen, M., Chu, R., Burnham, S. D., Khalil, S., Zehnder, D., Hughes, B., Boutros, K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Interface states at high- к /InGaAs interface: H2O vs. O3 based ALD dielectric
Madan, H., Veksler, D., Chen, Y. T., Huang, J., Goel, N., Bersuker, G., Datta, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth
Carter, A. D., Law, J. J. M., Lobisser, E., Burek, G. J., Mitchell, W. J., Thibeault, B. J., Gossard, A. C., Rodwell, M. J. W.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Compact model and performance estimation for tunneling nanowire FET
Solomon, P. M., Frank, D. J., Koswatta, S. O.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Total GaN solution to electrical power conversion
Wu, Y.-F, Coffie, R., Fichtenbaum, N., Dora, Y., Suh, C. S., Shen, L., Parikh, P., Mishra, U. K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Self-aligned gate nanopillar In0.53Ga0.47As vertical tunnel transistor
Mohata, D. K., Bijesh, R., Saripalli, V., Mayer, T., Datta, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding