Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors
Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, Rajan, S., Jena, D.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes
Haeger, D. A., Holder, C., Farrell, R. M., Po Shan Hsu, Kelchner, K. M., Fujito, K., Cohen, D. A., DenBaars, S. P., Speck, J. S., Nakamura, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Spintronics search engines
Dery, H., Ciftcioglu, B., Yang Song, Hui Wu, Huang, M., Kawakami, R., Jing Shi, Krivorotov, I., Zutic, I., Sham, L. J.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Aluminum top-gate ZnO nanowire transistors with improved transconductance
Kalblein, D., Fenk, B., Hahn, K., Zschieschang, U., Kern, K., Klauk, H.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Correlated oxide phase transition switch: A paradigm in electron devices
Zheng Yang, Changhyun Ko, Balakrishnan, V., Ramanathan, S.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
The effect of field effect device channel dimensions on the effective mobility of graphene
Venugopal, A., Chan, J., Kirk, W. P., Colombo, L., Vogel, E. M.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Creating dynamic nanowire devices using wrapped gates
Storm, K., Nylund, G., Borgstrom, M., Wallentin, J., Fasth, C., Thelander, C., Samuelson, L.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
P-type tunneling FET on Si (110) substrate with anisotropic effect
Lee, M. H., Kao, C.-Y, Yang, C.-L, Lee, C.-H
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Effect of oxide thickness scaling on self-heating in graphene transistors
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Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron
Singisetti, U., Man Hoi Wong, Speck, J. S., Mishra, U. K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Defect analysis of roll-to-roll SAIL manufactured flexible display backplanes
Taussig, C., Elder, R. E., Jackson, W. B., Jeans, A., Jam, M., Holland, E., Hao Luo, Maltabes, J., Perlov, C., Trovinger, S., Almanza-Workman, M., Garcia, R. A., HanJun Kim, Ohseung Kwon, Jeffrey, F.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Integrated non-III-nitride/III-nitride tandem solar cell
Toledo, N. G., Cruz, S. C., Neufeld, C. J., Lang, J. R., Scarpulla, M. A., Buehl, T., Gossard, A. C., Denbaars, S. P., Speck, J. S., Mishra, U. K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate
Kunert, B., Liebich, S., Zimprich, M., Beyer, A., Ziegler, S., Volz, K., Stolz, W., Hossain, N., Jin, S. R., Sweeney, S. J.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Combinational and sequential logic with transistors based on individual carbon nanotubes
Ryu, H., Kalblein, D., Zschieschang, U., Schmidt, O. G., Klauk, H.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Monolayer MoS2 transistors - ballistic performance limit analysis
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Conference Proceeding
Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors
Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, S., May, P. W.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding