1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation
Hu, Zongyang, Nomoto, Kazuki, Li, Wenshen, Jinno, Riena, Nakamura, Tohru, Jena, Debdeep, Xing, Huili
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Powering 5G Era Computing Platforms - the Road toward Integrated Power Delivery
Zou, Peng, Xie, Qiang, Song, Wei, Jiang, Qimeng, Lu, Yuliang, Huang, Boning
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
Kosugi, Ryoji, Ji, Shiyang, Mochizuki, Kazuhiro, Adachi, Kohei, Segawa, Satoshi, Kawada, Yasuyuki, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
Stockman, Arno, Canato, Eleonora, Meneghini, Matteo, Meneghesso, Gaudenzio, Moens, Peter, Bakeroot, Benoit
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
Oka, Tohru, Ina, Tsutomu, Ueno, Yukihisa, Nishii, Junya
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS
Aiba, Ruito, Okawa, Masataka, Kanamori, Taiga, Yano, Hiroshi, Iwamuro, Noriyuki, Kobayashi, Yusuke, Harada, Shinsuke
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs
Ishigaki, Takashi, Murata, Tatsunori, Kinoshita, Koyo, Morikawa, Takahiro, Oda, Tetsuo, Fujita, Ryuusei, Konishi, Kumiko, Mori, Yuki, Shima, Akio
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET
Kobayashi, Yusuke, Kyogoku, Shinya, Morimoto, Tadao, Kumazawa, Teruaki, Yamashiro, Yusuke, Takei, Manabu, Harada, Shinsuke
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers
Han, Shaowen, Yang, Shu, Li, Yongkai, Liu, Yinxiang, Sheng, Kuang
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method
Hoffmann, Felix, Soler, Victor, Mihaila, Andrei, Kaminski, Nando
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions
Ren, Na, Wang, Kang L., Wu, Jiupeng, Xu, Hongyi, Sheng, Kuang
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Kobayashi, Kenya, Kato, Hiroaki, Nishiguchi, Toshifumi, Shimomura, Saya, Ohno, Tetsuya, Nishiwaki, Tatsuya, Aida, Kikuo, Ichinoseki, Kentaro, Oasa, Kohei, Kawaguchi, Yusuke
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate
Bakeroot, Benoit, Stoffels, Steve, Posthuma, Niels, Wellekens, Dirk, Decoutere, Stefaan
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
Han, Ping-Cheng, Yan, Zong-Zheng, Wu, Chia-Hsun, Chang, Edward Yi, Ho, Yu-Hsuan
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Dynamic Threshold Voltage in p-GaN Gate HEMT
Wei, Jin, Xu, Han, Xie, Ruiliang, Zhang, Meng, Wang, Hanxing, Wang, Yuru, Zhong, Kailun, Hua, Mengyuan, He, Jiabei, Chen, Kevin J.
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Experimental and Numerical Investigations of Short-Circuit Failure Mechanisms for State-of-the-Art 1.2kV SiC Trench MOSFETs
Okawa, Masataka, Aiba, Ruito, Kanamori, Taiga, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, Shinsuke
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Superior Switching Characteristics of SiC-MOSFET Embedding SBD
Tominaga, Takaaki, Hino, Shiro, Mitsui, Yohei, Nakashima, Junichi, Kawahara, Koutarou, Tomohisa, Shingo, Miura, Naruhisa
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
Han, Kijeong, Agarwal, Aditi, Baliga, B. Jayant
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors
Xu, Han, Tang, Gaofei, Wei, Jin, Chen, Kevin J.
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Analysis the complex tradeoff among Eon-VCEsat-SCSOA and EMI noise through the single chip evaluation method
Nishi, Koichi, Takahashi, Tetsuo, Narazaki, Atsushi
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding