3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias
Swinnen, B., Ruythooren, W., De Moor, P., Bogaerts, L., Carbonell, L., De Munck, K., Eyckens, B., Stoukatch, S., Tezcan, D.S., Tokei, Z., Vaes, J., Van Aelst, J., Beyne, E.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires
Kyoung Hwan Yeo, Sung Dae Suk, Ming Li, Yun-young Yeoh, Keun Hwi Cho, Ki-Ha Hong, SeongKyu Yun, Mong Sup Lee, Nammyun Cho, Kwanheum Lee, Duhyun Hwang, Bokkyoung Park, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors
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Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology
Oh, J.H., Park, J.H., Lim, Y.S., Lim, H.S., Oh, Y.T., Kim, J.S., Shin, J.M., Song, Y.J., Ryoo, K.C., Lim, D.W., Park, S.S., Kim, J.I., Kim, J.H., Yu, J., Yeung, F., Jeong, C.W., Kong, J.H., Kang, D.H., Koh, G.H., Jeong, G.T., Jeong, H.S., Kinam Kim
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
Singh, N., Lim, F.Y., Fang, W.W., Rustagi, S.C., Bera, L.K., Agarwal, A., Tung, C.H., Hoe, K.M., Omampuliyur, S.R., Tripathi, D., Adeyeye, A.O., Lo, G.Q., Balasubramanian, N., Kwong, D.L.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
Shen, C., Li, M.-F., Foo, C.E., Yang, T., Huang, D.M., Yap, A., Samudra, G.S., Yeo, Y.-C.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits
Fernandez, R., Kaczer, B., Nackaerts, A., Demuynck, S., Rodriguez, R., Nafria, M., Groeseneken, G.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
Chen, Y.C., Rettner, C.T., Raoux, S., Burr, G.W., Chen, S.H., Shelby, R.M., Salinga, M., Risk, W.P., Happ, T.D., McClelland, G.M., Breitwisch, M., Schrott, A., Philipp, J.B., Lee, M.H., Cheek, R., Nirschl, T., Lamorey, M., Chen, C.F., Joseph, E., Zaidi, S., Yee, B., Lung, H.L., Bergmann, R., Lam, C.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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High performance Ge pMOS devices using a Si-compatible process flow
Zimmerman, P., Nicholas, G., De Jaeger, B., Kaczer, B., Stesmans, A., Ragnarsson, L.-A., Brunco, D.P., Leys, F.E., Caymax, M., Winderickx, G., Opsomer, K., Meuris, M., Heyns, M.M.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node
Soon-Moon Jung, Jaehoon Jang, Wonseok Cho, Hoosung Cho, Jaehun Jeong, Youngchul Chang, Jonghyuk Kim Youngseop Rah, Yangsoo Son, Junbeom Park, Min-Sung Song, Kyoung-Hon Kim, Jm-Soo Lim, Kinam Kim
Published in 2006 International Electron Devices Meeting (2006)
Published in 2006 International Electron Devices Meeting (2006)
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Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Medjdoub, F., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Ducatteau, D., Gaquiere, C., Grandjean, N., Kohn, E.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling
Cros, A., Romanjek, K., Fleury, D., Harrison, S., Cerutti, R., Coronel, P., Dumont, B., Pouydebasque, A., Wacquez, R., Duriez, B., Gwoziecki, R., Boeuf, F., Brut, H., Ghibaudo, G., Skotnicki, T.
Published in 2006 International Electron Devices Meeting (2006)
Published in 2006 International Electron Devices Meeting (2006)
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High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
Agnello, P., Ivers, T., Warm, C., Wise, R., Wachnik, R., Schepis, D., Sankaran, S., Norum, J., Luning, S., Li, Y., Khare, M., Grill, A., Edelstein, D., Chen, X., Brown, D., Augur, R., Wu, S., Yu, J., Wong, R.C., Werking, J., Wehella-Gamage, D., Vayshenker, A., Van Meer, H., Van Den Nieuwenhuizen, R., Tian, C., Tabakman, K., Sung, C.Y., Standaert, T., Simon, A., Sim, J., Sheraw, C., Restaino, D., Rausch, W., Pal, R., Prindle, C., Ouyang, X., Ouyang, C., Ontalus, V., Nummy, K., Nielsen, D., Nicholson, L., McKnight, A., Lustig, N., Liu, X., Lee, M.H., Lea, D., Larosa, G., Landers, W., Kim, B., Kelling, M., Jeng, S.-J., Holt, J., Hargrove, M., Grunow, S., Greco, S., Gates, S., Frye, A., Fisher, P., Domenicucci, A., Dimitrakopoulos, C., Costrini, G., Chou, A., Cheng, J., Butt, S., Black, L., Belyansky, M., Ahsan, I., Adam, T., Gabor, A., Wu, C.-H.J., Yang, D., Crouse, M., Robinson, C., Corliss, D., Fonseca, C., Johnson, J., Weybright, M., Waite, A., Nayfeh, H.M., Onishi, K., Narasimha, S.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Random Telegraph Signal in CMOS Image Sensor Pixels
Xinyang Wang, Rao, P.R., Mierop, A., Theuwissen, A.J.P.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies
Salman, A.A., Beebe, S.G., Emam, M., Pelella, M.M., Ioannou, D.E.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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A 3D Packaging Technology for 4 Gbit Stacked DRAM with 3 Gbps Data Transfer
Kawano, M., Uchiyama, S., Egawa, Y., Takahashi, N., Kurita, Y., Soejima, K., Komuro, M., Matsui, S., Shibata, K., Yamada, J., Ishino, M., Ikeda, H., Saeki, Y., Kato, O., Kikuchi, H., Mitsuhashi, T.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory
Tega, N., Miki, H., Osabe, T., Kotabe, A., Otsuga, K., Kurata, H., Kamohara, S., Tokami, K., Ikeda, Y., Yamada, R.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
GaN HFET for W-band Power Applications
Micovic, M., Kurdoghlian, A., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P.J., Wong, W.S., Bowen, R., Milosavljevic, I., Schmitz, A., Wetzel, M., Chow, D.H.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C
Snodgrass, W., Hafez, W., Harff, N., Feng, M.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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