1.0 µm CMOS process for highly stable tera-ohm polysilicon load 1Mb SRAM
Hoshi, N., Kayama, S., Nishihara, T., Aoyama, J., Komatsu, T., Shimada, T.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
Excimer laser-based lithography for 0.5 µm device technology
Bennewitz, J.H., Escher, G.C., Feldman, M., Firtion, V.A., Jewell, T.E., Pol, V., Wilcomb, B.E., Clemens, J.T.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A novel scaled down oxygen implanted polysilicon resistor for future static RAMs
Saito, R., Sawahata, Y., Nagano, T., Momma, N.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A new MOS image sensor operating in a non-destructive readout mode
Nakamura, T., Matsumoto, K., Hyuga, R., Yusa, A.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A computerized three dimensional approach to beam measurement and analysis
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Conference Proceeding
A novel quantum interference transistor (QUIT) with extremely low power-delay product and very high transconductance
Bandyopadhyay, S., Melloch, M.R., Datta, S., Das, B., Cooper, J.A., Lundstrom, M.S.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A measurement-based charge sheet capacitance model of short-channel MOSFET's for SPICE
Hong June Park, Ping Keung Ko, Chenming Hu
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A single-step MOCVD technology for AlGaAs BH lasers
Sugino, T., Yoshikawa, A., Yamamoto, A., Hirose, M., Kano, G., Teramoto, I.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
GaAs-MESFETs fabricated in SOI layers on crystalline CaxSr1-xF2insulator films
Tsutsui, K., Asano, T., Ishiwara, H., Furukawa, S.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
Deep-trench power MOSFET with an Ron Area product of 160 m Ω .mm2
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Conference Proceeding
Microwave AlxGa1-xAs hetero-MIS gate depletion-mode InP field effect transistors
Itoh, T., Kasahara, K., Ozawa, T., Ohata, K.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A high harmonic gyro-TWTA
Furuno, D.S., McDermott, D.B., Luhmann, N.C.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
A 760mS/mm N+self-aligned enhancement mode doped-channel MIS-like FET (DMT)
Hida, H., Suzuki, Y., Katano, F., Toyoshima, H., Okamoto, A., Kumashiro, S.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
0.5 µm-channel CMOS technology optimized for liquid-nitrogen-temperature operation
Sun, J.Y.-C., Taur, Y., Dennard, R.H., Klepner, S.P., Wang, L.K.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding
The MBE grown GaAs quantum well base hot electron transistors
Chang, C., Liu, W., Wang, Y., Jame, M.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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Conference Proceeding