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The storage lifetime model based on multi-performance degradation parameters
by
齐浩淳 张小玲 谢雪松 吕长志
Published in
Journal of semiconductors
(01.10.2014)
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Accelerating the life of transistors
by
齐浩淳 吕长志 张小玲 谢雪松
Published in
Journal of semiconductors
(01.06.2013)
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Storage life of power switching transistors based on performance degradation data
by
齐浩淳 张小玲 谢雪松 吕长志
陈成菊 赵利
Published in
Journal of semiconductors
(01.04.2014)
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Journal Article
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Subject Area
engineering
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physics
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degradation
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physical sciences
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physics
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physics, condensed matter
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science & technology
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semiconductor devices
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English
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IOP Electronic Journals
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