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An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
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马雪丽 杨红 王文武 殷华湘 朱慧珑 赵超 陈大鹏 叶甜春
Published in
Journal of semiconductors
(01.09.2014)
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The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
by
马雪丽 杨红 王文武 殷华湘 朱慧珑 赵超 陈大鹏 叶甜春
Published in
Journal of semiconductors
(01.10.2014)
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Journal Article
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engineering
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physics
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effective work function
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gates
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intermetallics
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physical sciences
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physics
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physics, condensed matter
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AUTh Library subscriptions: IOP Publishing
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