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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
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顾溢 张永刚 宋禹忻 叶虹 曹远迎 李爱珍 王庶民
Published in
Chinese physics B
(01.03.2013)
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Journal Article
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physics
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1.3 mum
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bismuth
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dilute bismide
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doppler effect
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gaasbi
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gallium arsenide
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English
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AUTh Library subscriptions: IOP Publishing
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