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The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

by 陆建新欧欣蓝学新曹正义刘晓杰卢伟龚昌杰徐波李爱东夏奕东殷江刘治国
Published in 中国物理快报：英文版 (01.02.2014)

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Journal Article