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带有原位生长SiNx绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件

by 陈晓娟, 张一川, 张昇, 李艳奎, 牛洁斌, 黄森, 马晓华, 张进成, 魏珂
Published in 红外与毫米波学报 (2023)

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具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN毫米波MIS-HEMTs

by 袁静, 景冠军, 王建超, 汪柳, 高润华, 张一川, 姚毅旭, 魏珂, 李艳奎, 陈晓娟
Published in 红外与毫米波学报 (2024)

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应用于宽带的AlGaN/GaN MIS-HEMT高效率器件

by 陈晓娟, 张昇, 张一川, 李艳奎, 高润华, 刘新宇, 魏珂
Published in 红外与毫米波学报 (2023)

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METAL-INSULATOR-SEMICONDUCTOR TRANSISTORS WITH GATE-DIELECTRIC/SEMICONDUCTOR INTERFACIAL PROTECTION LAYER

by HUA MENGYUAN, CHEN JING
Year of Publication 26.04.2019
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