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"郑齐文"
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背栅偏置对不同沟道长度PDSOI晶体管总剂量损伤规律及机理研究
by
王海洋
,
郑齐文
,
崔江维
,
李豫东
,
郭旗
Published in
核技术
(15.05.2022)
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基于SOI结构的辐照传感器的辐照响应特性研究
by
孙静
,
郭旗
,
郑齐文
,
崔江维
,
何承发
,
刘海涛
,
刘许强
,
刘梦新
Published in
核技术
(10.12.2019)
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X射线对金硅界面剂量增强效应的模拟研究
by
吴正新 何承发 陆妩 郭旗 艾尔肯阿不列木 于新 张磊 邓伟
郑齐文
Published in
核技术
(2013)
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An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
by
马腾
郑齐文
崔江维 周航 苏丹丹 余学峰 郭旗
Published in
Chinese physics letters
(01.06.2017)
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
by
郑齐文
崔江维 刘梦新 苏丹丹 周航 马腾 余学峰 陆妩 郭旗 赵发展
Published in
Chinese physics B
(01.08.2017)
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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
by
郑齐文
崔江维 周航 余德昭 余学峰 陆妩 郭旗 任迪远
Published in
Chinese physics B
(01.10.2015)
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Total dose responses and reliability issues of 65 nm NMOSFETs
by
余德昭
郑齐文
崔江维 周航 余学峰 郭旗
Published in
Journal of semiconductors
(01.06.2016)
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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation
by
郑齐文
余学峰 崔江维 郭旗 任迪远 丛忠超 周航
Published in
Chinese physics B
(01.10.2014)
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Hot-carrier effects on irradiated deep submicron NMOSFET
by
崔江维
郑齐文
余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远
Published in
Journal of semiconductors
(01.07.2014)
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3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors
by
张晋新 郭红霞 文林 郭旗 崔江维 王信 邓伟
郑齐文
范雪 肖尧
Published in
Journal of semiconductors
(01.04.2014)
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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
by
郑齐文
余学峰 崔江维 郭旗 丛忠超 张兴尧 邓伟 张孝富 吴正新
Published in
Journal of semiconductors
(01.07.2013)
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Value of Access to Jobs and Amenities:Evidence from New Residential Properties in Beijing
by
丁
文
捷
郑
思
齐
郭晓旸
Published in
Tsinghua science and technology
(01.10.2010)
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