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Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
by
邓小川 张波 张有润 王易 李肇基
Published in
Chinese physics B
(2011)
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Format
Journal Article
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Subject Area
physics
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Topic
4h-sic
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mesfet
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metal-semiconductor field-effect transistors
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physical sciences
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physics
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physics, multidisciplinary
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Language
English
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IOP Science Platform
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