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Search Results - "贾一凡 吕红亮 钮应喜 李玲 宋庆文 汤晓燕 李诚瞻 赵艳黎 肖莉 王梁永 唐光明 张义门 张玉明"
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices
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贾一凡 吕红亮 钮应喜 李玲 宋庆文 汤晓燕 李诚瞻 赵艳黎 肖莉 王梁永 唐光明 张义门 张玉
明
Published in
Chinese physics B
(01.09.2016)
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Format
Journal Article
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Subject Area
physics
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Topic
4h-sic
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4hsic metal-oxide-semiconductor devices
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near interface oxide traps
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no annealing
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oxide traps
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physical sciences
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English
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IOP_英国物理学会现刊（含NSTL购买的14种刊）
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