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An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage
by
谢刚 Edward Xu Niloufar Hashemi 张波 Fred Y
.
Fu Wai Tung Ng
Published in
Chinese physics B
(01.08.2012)
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Journal Article
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physics
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Topic
algan
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algan/gan hemt
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breakdown
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breakdown voltage
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devices
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electric fields
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English
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AUTh Library subscriptions: IOP Publishing
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