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Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells
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王建霞 杨少延 王俊 刘贵鹏 李志伟 李辉杰 金东东 刘祥林 朱勤生 王占国
Published in
中国物理B：英文版
(01.07.2013)
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Journal Article
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physics
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algan
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algan/gan quantum wells
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mobility
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physical sciences
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physics
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physics, multidisciplinary
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English
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AUTh Library subscriptions: IOP Publishing
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