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Development and characteristics analysis of recessed-gate MOS HEMT
by
王冲 马晓华 冯倩 郝跃 张进城 毛维
Published in
Journal of semiconductors
(01.05.2009)
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Journal Article
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engineering
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physics
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algan/gan
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dielectric gate
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hemt器件
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high electron mobility transistors
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mos晶体管
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physical sciences
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English
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AUTh Library subscriptions: IOP Publishing
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