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Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
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王东方 袁婷婷 魏珂 陈晓娟 刘新宇
Published in
Journal of semiconductors
(01.05.2010)
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A Ka-band 22 dBm GaN amplifier MMIC
by
王东方 陈晓娟 袁婷婷 魏珂 刘新宇
Published in
Journal of semiconductors
(01.08.2011)
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Journal Article
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Subject Area
engineering
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physics
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Topic
algan
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algan/gan hemt
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physical sciences
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physics
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physics, condensed matter
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science & technology
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English
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IOP Science Platform
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