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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
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杨凌 周小伟 马晓华 吕玲 曹艳荣 张进成 郝跃
Published in
中国物理B:英文版
(2017)
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
by
杨凌 周小伟 马晓华 吕玲 曹艳荣 张进成 郝跃
Published in
Chinese physics B
(2017)
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physics
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algan/gan
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algan/gan hemt
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early electrical reliability
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fluorine implant ion
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hemt器件
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low plasma power
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IOP Electronic Journals
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