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A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure
by
李冰华 江兴川 李志贵 林信南
Published in
Journal of semiconductors
(01.12.2013)
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Journal Article
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engineering
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physics
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Topic
accumulation channel
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breakdown
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channels
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electric potential
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insulated gate bipolar transistors
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physical sciences
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English
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Institute of Physics (IOP) Publishing Journals
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