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Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
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曾严 李小进 卿健 孙亚宾 石艳玲 郭奥 胡少坚
Published in
Chinese physics B
(01.10.2017)
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Journal Article
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physics
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cmos
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interface trap
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locking effect
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negative bias temperature instability
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physical sciences
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physics
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English
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AUTh Library subscriptions: IOP Publishing
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