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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

by 房玉龙敦少博刘波尹甲运蔡树军冯志红
Published in Journal of semiconductors (01.05.2012)

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Journal Article

Influence of drain bias on the electron mobility in AIGaN/AIN/GaN heterostructure field-effect transistors

Influence of drain bias on the electron mobility in AIGaN/AIN/GaN heterostructure field-effect transistors

by 吕元杰冯志红蔡树军敦少博刘波尹甲运张雄文房玉龙林兆军孟令国栾崇彪
Published in 中国物理B：英文版 (2013)

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Journal Article