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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
by
张家琦 王磊 李柳暗 王青鹏 江滢 朱慧超 敖金平
Published in
Chinese physics B
(01.08.2016)
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Journal Article
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physics
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algan/gan
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algan/gan hfets
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electrodes
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field effect transistors
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gates
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heterostructures
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English
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IOP Science Platform
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