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Search Results - "张义门"
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一种基于三维集成电路的多位碳纳米管硅通孔
by
关文博
,
吕红亮
,
张玉明
,
张义门
Published in
电子元件与材料
(2022)
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一种InP HEMT分布小信号模型建模方法
by
戚军军
,
吕红亮
,
程林
,
张玉明
,
张义门
,
赵锋国
,
段兰燕
Published in
红外与毫米波学报
(2022)
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一种改进的InP HBT小信号模型的直接提取法
by
戚军军
,
吕红亮
,
张玉明
,
张义门
,
张金灿
Published in
红外与毫米波学报
(2020)
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InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触
by
张静
,
吕红亮
,
倪海桥
,
牛智川
,
张义门
,
张玉明
Published in
红外与毫米波学报
(2018)
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Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
by
张倩 张玉明
张义门
Published in
Journal of semiconductors
(2010)
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Analytical models for the base transit time of a bipolar transistor with double base epilayers
by
张倩 张玉明
张义门
Published in
Journal of semiconductors
(2009)
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Raman analysis of epitaxial graphene on 6H-SiC （0001） substrates under low pressure environment
by
王党朝 张玉明
张义门
雷天民 郭辉 王悦湖 汤晓燕 王航
Published in
半导体学报
(2011)
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Interfacial and electrical characteristics of a HfO2/n–InAlAs MOS-capacitor with different dielectric thicknesses
by
关赫 吕红亮 郭辉
张义门 张
玉明 武利翻
Published in
中国物理B：英文版
(01.12.2015)
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes
by
王守国
张
岩
张义门 张
玉明
Published in
Chinese physics B
(2010)
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region
by
宋庆文
张
玉明
张义门 张
倩 吕红亮
Published in
Chinese physics B
(01.08.2010)
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Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
by
宋庆文
张
玉明
张义门
陈丰平 汤晓燕
Published in
Chinese physics B
(01.05.2011)
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Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
by
陈丰平
张
玉明
张义门
汤晓燕 王悦湖 陈文豪
Published in
Chinese physics B
(01.11.2011)
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Ohmic contacts of 4H-SiC on ion-implantation layers
by
王守国
张
岩
张义门 张
玉明
Published in
Chinese physics B
(2010)
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices
by
贾一凡 吕红亮 钮应喜 李玲 宋庆文 汤晓燕 李诚瞻 赵艳黎 肖莉 王梁永 唐光明
张义门 张
玉明
Published in
Chinese physics B
(01.09.2016)
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4H-SiC Schottky barrier diodes with semi-insulating polycrystaUine silicon field plate termination
by
袁昊 汤晓燕
张义门 张
玉明 宋庆文 杨霏 吴昊
Published in
中国物理B：英文版
(2014)
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
by
黄健华 吕红亮
张
玉明
张义门
汤晓燕 陈丰平 宋庆文
Published in
Chinese physics B
(01.11.2011)
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Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
by
宋庆文 汤晓燕 袁昊 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮
张义门 张
玉明
Published in
Chinese physics B
(01.04.2016)
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Fabrication and characterization of the normally,off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors
by
宋庆文 汤晓燕 何艳静 唐冠男 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮
张义门 张
玉明
Published in
Chinese physics B
(01.03.2016)
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Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors
by
王守国
张义门 张
玉明
Published in
Chinese physics B
(01.09.2010)
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Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor
by
刘琛
张
玉明
张义门
吕红亮
Published in
中国物理B：英文版
(01.07.2013)
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