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"崔江维"
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"崔江维"
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背栅偏置对不同沟道长度PDSOI晶体管总剂量损伤规律及机理研究
by
王海洋
,
郑齐文
,
崔江维
,
李豫东
,
郭旗
Published in
核技术
(15.05.2022)
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碳化硅VDMOS的静态和动态辐射损伤及其比较
by
冯皓楠
,
杨圣
,
梁晓雯
,
张丹
,
蒲晓娟
,
孙静
,
魏莹
,
崔江维
,
李豫东
,
余学峰
,
郭旗
Published in
原子能科学技术
(2022)
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基于SOI结构的辐照传感器的辐照响应特性研究
by
孙静
,
郭旗
,
郑齐文
,
崔江维
,
何承发
,
刘海涛
,
刘许强
,
刘梦新
Published in
核技术
(10.12.2019)
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Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
by
崔江维
薛耀国 余学峰 任迪远 卢健 张兴尧
Published in
Journal of semiconductors
(2012)
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Double humps and radiation effects of SOI NMOSFET
by
崔江维
余学峰 任迪远 何承发 高博 李明 卢健
Published in
Journal of semiconductors
(01.06.2011)
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An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
by
马腾 郑齐文
崔江维
周航 苏丹丹 余学峰 郭旗
Published in
Chinese physics letters
(01.06.2017)
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
by
郑齐文
崔江维
刘梦新 苏丹丹 周航 马腾 余学峰 陆妩 郭旗 赵发展
Published in
Chinese physics B
(01.08.2017)
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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
by
郑齐文
崔江维
周航 余德昭 余学峰 陆妩 郭旗 任迪远
Published in
Chinese physics B
(01.10.2015)
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Total dose responses and reliability issues of 65 nm NMOSFETs
by
余德昭 郑齐文
崔江维
周航 余学峰 郭旗
Published in
Journal of semiconductors
(01.06.2016)
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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
by
李培 郭红霞 郭旗 张晋新 肖尧 魏莹
崔江维
文林 刘默寒 王信
Published in
Chinese physics B
(01.08.2015)
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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation
by
郑齐文 余学峰
崔江维
郭旗 任迪远 丛忠超 周航
Published in
Chinese physics B
(01.10.2014)
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Hot-carrier effects on irradiated deep submicron NMOSFET
by
崔江维
郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远
Published in
Journal of semiconductors
(01.07.2014)
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3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors
by
张晋新 郭红霞 文林 郭旗
崔江维
王信 邓伟 郑齐文 范雪 肖尧
Published in
Journal of semiconductors
(01.04.2014)
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Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
by
王信 陆妩 郭旗 吴雪 席善斌 邓伟
崔江维
Published in
Journal of semiconductors
(01.12.2013)
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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
by
郑齐文 余学峰
崔江维
郭旗 丛忠超 张兴尧 邓伟 张孝富 吴正新
Published in
Journal of semiconductors
(01.07.2013)
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Total ionizing dose effects and annealing behavior for domestic VDMOS devices
by
高博 余学峰 任迪远 刘刚 王义元 孙静
崔江维
Published in
Journal of semiconductors
(01.04.2010)
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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
by
兰博 郭旗 孙静
崔江维
李茂顺 陈睿 费武雄 赵云
Published in
Journal of semiconductors
(01.05.2010)
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