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基于再生长欧姆接触工艺的220GHzInAIN／GaN场效应晶体管

by 尹甲运吕元杰宋旭波谭鑫张志荣房玉龙冯志红蔡树军
Published in 红外与毫米波学报 (2017)

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基于60nmT型栅fT＆f（max）为170＆210 GHz的InAlN/GaN HFETs器件（英文）

by 吕元杰冯志红张志荣宋旭波谭鑫郭红雨尹甲运房玉龙蔡树军
Published in 红外与毫米波学报 (2016)

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