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Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
by
冯锦锋 刘畅 俞文杰 彭颖红
Published in
中国物理快报：英文版
(01.05.2016)
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Journal Article
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physics
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physical sciences
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physics
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physics, multidisciplinary
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science & technology
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场效应晶体管
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English
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Institute of Physics Journals
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