Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry
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X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers
Klang, P, Holý, V, Kuběna, J, Štoudek, R, Šik, J
Published in Journal of physics. D, Applied physics (21.05.2005)
Published in Journal of physics. D, Applied physics (21.05.2005)
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Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths
Leibiger, G., Gottschalch, V., Rheinländer, B., Šik, J., Schubert, M.
Published in Journal of applied physics (01.05.2001)
Published in Journal of applied physics (01.05.2001)
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Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
Slugeň, V., Harmatha, L., Ťapajna, M., Ballo, P., Písečný, P., Šik, J., Kögel, G., Kršjak, V.
Published in Applied surface science (28.02.2006)
Published in Applied surface science (28.02.2006)
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Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy
Schubert, M, Kasic, A, Šik, J, Einfeldt, S, Hommel, D, Härle, V, Off, J, Scholz, F
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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A comparison of aspiration cytology and core needle biopsy in the evaluation of breast lesions
Westenend, Pieter J., Sever, Ali R., Beekman‐de Volder, Hannie J. C., Liem, Sik J.
Published in Cancer (25.04.2001)
Published in Cancer (25.04.2001)
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Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
Šik, J., Schubert, M., Leibiger, G., Gottschalch, V., Wagner, G.
Published in Journal of applied physics (01.01.2001)
Published in Journal of applied physics (01.01.2001)
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Toward modeling and simulation of critical national infrastructure interdependencies
Min, Hyeung-Sik J., Beyeler, Walter, Brown, Theresa, Son, Young Jun, Jones, Albert T.
Published in IIE transactions (01.01.2007)
Published in IIE transactions (01.01.2007)
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Limits of the copper decoration technique for delineating of the V–I boundary
Válek, L., Stehlík, Š., Orava, J., Ďurík, M., Šik, J., Wágner, T.
Published in The Journal of physics and chemistry of solids (01.05.2007)
Published in The Journal of physics and chemistry of solids (01.05.2007)
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Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study
Harmatha, L., Ťapajna, M., Slugeň, V., Ballo, P., Písečný, P., Šik, J., Kögel, G.
Published in Microelectronics (01.04.2006)
Published in Microelectronics (01.04.2006)
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Optical properties and phase change transition in Ge 2 Sb 2 Te 5 flash evaporated thin films studied by temperature dependent spectroscopic ellipsometry
Orava, J., Wágner, T., Šik, J., Přikryl, J., Frumar, M., Beneš, L.
Published in Journal of applied physics (27.08.2008)
Published in Journal of applied physics (27.08.2008)
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A defect-resistant Co–Ni superalloy for 3D printing
Murray, Sean P., Pusch, Kira M., Polonsky, Andrew T., Torbet, Chris J., Seward, Gareth G. E., Zhou, Ning, Forsik, Stéphane A. J., Nandwana, Peeyush, Kirka, Michael M., Dehoff, Ryan R., Slye, William E., Pollock, Tresa M.
Published in Nature communications (02.10.2020)
Published in Nature communications (02.10.2020)
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