Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers
Kurka, M, Badura, M, Dyksik, M, Ryczko, K, Kopaczek, J, Misiewicz, J, ciana, B, T acza a, M, Sankowska, I, Pier ci ski, K, Motyka, M
Published in Journal of physics communications (01.12.2019)
Published in Journal of physics communications (01.12.2019)
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Journal Article
Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties
Ściana, B., Radziewicz, D., Dawidowski, W., Bielak, K., Szyszka, A., Kopaczek, J.
Published in Journal of materials science. Materials in electronics (01.09.2019)
Published in Journal of materials science. Materials in electronics (01.09.2019)
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Journal Article
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
López-Escalante, M.C., Ściana, B., Dawidowski, W., Bielak, K., Gabás, M.
Published in Applied surface science (01.03.2018)
Published in Applied surface science (01.03.2018)
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Journal Article
Defect distribution in InGaAsN/GaAs multilayer solar cells
Kosa, A., Stuchlikova, L., Harmatha, L., Mikolasek, M., Kovac, J., Sciana, B., Dawidowski, W., Radziewicz, D., Tlaczala, M.
Published in Solar energy (01.07.2016)
Published in Solar energy (01.07.2016)
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Journal Article
Determination of composition of non-homogeneous GaInNAs layers
Pucicki, D., Bielak, K., Ściana, B., Radziewicz, D., Latkowska-Baranowska, M., Kováč, J., Vincze, A., Tłaczała, M.
Published in Journal of crystal growth (01.01.2016)
Published in Journal of crystal growth (01.01.2016)
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Journal Article
LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications
Ściana, B., Badura, M., Dawidowski, W., Bielak, K., Radziewicz, D., Pucicki, D., Szyszka, A., Żelazna, K., Tłaczała, M.
Published in Opto-electronics review (01.06.2016)
Published in Opto-electronics review (01.06.2016)
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Journal Article
MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications
Ściana, B., Radziewicz, D., Pucicki, D., Zborowska-Lindert, I., Serafińczuk, J., Tłaczała, M., Latkowska, M., Kováč, J., Srnanek, R.
Published in Crystal research and technology (1979) (01.03.2012)
Published in Crystal research and technology (1979) (01.03.2012)
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Journal Article
Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy
Srnanek, R., Irmer, G., Donoval, D., Novotny, I., Sciana, B., Radziewicz, D., Tlaczala, M.
Published in Applied surface science (30.05.2008)
Published in Applied surface science (30.05.2008)
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Journal Article
Functionally graded semiconductor layers for devices application
Paszkiewicz, B., Paszkiewicz, R., Wosko, M., Radziewicz, D., Ściana, B., Szyszka, A., Macherzynski, W., Tłaczała, M.
Published in Vacuum (12.12.2007)
Published in Vacuum (12.12.2007)
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Journal Article
Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers
Macherzyński, W, Wośko, M, Paszkiewicz, B, Ściana, B, Paszkiewicz, R, Tłaczała, M
Published in Journal of physics. Conference series (01.01.2009)
Published in Journal of physics. Conference series (01.01.2009)
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Journal Article
APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
Ściana, B., Pucicki, D., Radziewicz, D., Serafińczuk, J., Kozłowski, J., Paszkiewicz, B., Tłaczała, M., Poloczek, P., Sęk, G., Misiewicz, J.
Published in Vacuum (12.12.2007)
Published in Vacuum (12.12.2007)
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Journal Article
Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation
Nowaczyk, M, Sęk, G, Misiewicz, J, Ściana, B, Radziewicz, D, Tłaczała, M
Published in Thin solid films (22.12.2000)
Published in Thin solid films (22.12.2000)
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Journal Article
Conference Proceeding
The Influence of the Rapid Thermal Annealing Process on Defect Distribution in GaAsN p-i-n Structures for Solar Cells
Kosa, A., Drobny, J., Dawidowski, W., Mikolasek, M., Sciana, B., Stuchlikova, L.
Published in 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (11.10.2020)
Published in 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (11.10.2020)
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Conference Proceeding
Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications
Ściana, B., Zborowska-Lindert, I., Pucicki, D., Boratyński, B., Radziewicz, D., Tłaczała, M., Serafińczuk, J., Poloczek, P., Sęk, G., Misiewicz, J.
Published in Opto-electronics review (01.01.2008)
Published in Opto-electronics review (01.01.2008)
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Journal Article
Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
Srnanek, R., Geurts, J., Lentze, M., Irmer, G., Kovac, J., Donoval, D., Mc Phail, D.S., Kordos, P., Florovic, M., Vincze, A., Sciana, B., Radziewicz, D., Tlaczala, M.
Published in Thin solid films (21.02.2006)
Published in Thin solid films (21.02.2006)
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Journal Article
Accurate carrier profiling of n-type GaAs junctions
Clarysse, T., Brammertz, G., Vanhaeren, D., Eyben, P., Goossens, J., Clemente, F., Meuris, M., Vandervorst, W., Srnanek, R., Kinder, R., Sciana, B., Radziewicz, D., Li, Zhiqiang
Published in Materials science in semiconductor processing (01.10.2008)
Published in Materials science in semiconductor processing (01.10.2008)
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Journal Article
Conference Proceeding
Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
Srnanek, R, Geurts, J, Lentze, M, Irmer, G, Donoval, D, Brdecka, P, Kordos, P, Förster, A, Sciana, B, Radziewicz, D, Tlaczala, M
Published in Applied surface science (31.05.2004)
Published in Applied surface science (31.05.2004)
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Journal Article
MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1-xAs
SCIANA, B, RADZIEWICZ, D, SRNANEK, R, PASZKIEWICZ, B, TŁACZAŁA, M, UTKO, M, SITAREK, P, SIKH, G, MISIEWICZ, J, KINDER, R, KOVAC, J
Published in Thin solid films (03.06.2002)
Published in Thin solid films (03.06.2002)
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Conference Proceeding
Journal Article