AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P
Published in Semiconductor science and technology (01.08.2007)
Published in Semiconductor science and technology (01.08.2007)
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Journal Article
Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier
Kuzmik, J, Ostermaier, C, Pozzovivo, G, Basnar, B, Schrenk, W, Carlin, J.-F, Gonschorek, M, Feltin, E, Grandjean, N, Douvry, Y, Gaquière, C, De Jaeger, J.-C, Čičo, K, Fröhlich, K, Škriniarová, J, Kováč, J, Strasser, G, Pogany, D, Gornik, E
Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures
Ťapajna, M, Čičo, K, Kuzmík, J, Pogany, D, Pozzovivo, G, Strasser, G, Carlin, J-F, Grandjean, N, Fröhlich, K
Published in Semiconductor science and technology (01.03.2009)
Published in Semiconductor science and technology (01.03.2009)
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Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors
Kordoš, P., Mikulics, M., Stoklas, R., Čičo, K., Dadgar, A., Grűtzmacher, D., Krost, A.
Published in Journal of electronic materials (01.11.2012)
Published in Journal of electronic materials (01.11.2012)
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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
CICO, K, GREGUSOVA, D, KUZMIK, J, JURKOVIC, M, ALEXEWICZ, A, DI FORTE POISSON, M.-A, POGANY, D, STRASSER, G, DELAGE, S, FRÖHLICH, K
Published in Solid-state electronics (2012)
Published in Solid-state electronics (2012)
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Journal Article
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J.-C., Cico, K., Frohlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.
Published in IEEE electron device letters (01.10.2009)
Published in IEEE electron device letters (01.10.2009)
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Journal Article
Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier
Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, Christophe, de Jaeger, Jean-Claude, Cico, K., Frölich, K., Skriniarova, J., Kovacs, J., Strasser, G., Pogany, D., Gornik, E.
Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Journal Article
The Daily Patterns of Emergency Medical Events
Helander, Mary E, Formica, Margaret K, Bergen-Cico, Dessa K
Published in Journal of biological rhythms (01.02.2024)
Published in Journal of biological rhythms (01.02.2024)
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Journal Article
Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures
CICO, K, KUZMIK, J, GREGUSOVA, D, STOKLAS, R, LALINSKY, T, GEORGAKILAS, A, POGANY, D, FRÖHLICH, K
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Conference Proceeding
Journal Article
Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide
Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Novák, J., Kordoš, P.
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD
Pozzovivo, G., Kuzmik, J., Golka, S., Čičo, K., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., Pogany, D.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD
Jurkovič, M, Hušeková, K, Čičo, K, Dobročka, E, Nemec, M, Fedor, J, Fröhlich, K
Published in The Eighth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2010)
Published in The Eighth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2010)
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Conference Proceeding
Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition
Frohlich, K., Luptak, R., Dobrocka, E., Husekova, K., Cico, K., Rosova, A., Lukosius, M., Abrutis, A., Pisecny, P., Espinos, J.P.
Published in Materials science in semiconductor processing (01.12.2006)
Published in Materials science in semiconductor processing (01.12.2006)
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Conference Proceeding
Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition
Frohlich, K, Luptak, R, Husekova, K, Cico, K, Tapajna, M, Weber, U, Baumann, P K, Lindner, J, Espinos, J P
Published in Journal of the Electrochemical Society (01.01.2006)
Published in Journal of the Electrochemical Society (01.01.2006)
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Journal Article
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al 2O 3 gate insulation and passivation
Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M.-A., Pogany, D., Strasser, G., Delage, S., Fröhlich, K.
Published in Solid-state electronics (2012)
Published in Solid-state electronics (2012)
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Journal Article
Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al 2 O 3 /InAlN/GaN heterostructures
Ťapajna, M, Čičo, K, Kuzmík, J, Pogany, D, Pozzovivo, G, Strasser, G, Carlin, J-F, Grandjean, N, Fröhlich, K
Published in Semiconductor science and technology (01.03.2009)
Published in Semiconductor science and technology (01.03.2009)
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Journal Article
Material and electrical properties of N-polar (GaN)/InN surfaces
Cico, K., Adikimenakis, A., Micusik, M., Hascik, S., Georgakilas, A., Kuzmik, J.
Published in The Tenth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2014)
Published in The Tenth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2014)
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Conference Proceeding