A FIN-LDMOS with Bulk Electron Accumulation Effect
Chen, Weizhong, Duan, Zubing, Zhang, Hongsheng, Han, Zhengsheng, Wang, Zeheng
Published in Micromachines (Basel) (10.06.2023)
Published in Micromachines (Basel) (10.06.2023)
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Three-Dimensional TID Hardening Design for 14 nm Node SOI FinFETs
Lu, Peng, Yang, Can, Li, Yifei, Li, Bo, Han, Zhengsheng
Published in Eng (Basel, Switzerland) (01.12.2021)
Published in Eng (Basel, Switzerland) (01.12.2021)
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The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction
Chen, Weizhong, He, Lijun, Han, Zhengsheng, Huang, Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Antitumor Activity of the Procyanidins from Pinus koraiensis Bark on Mice Bearing U14 Cervical Cancer
LI, Kun, LI, Qingwang, LI, Jian, ZHANG, Tao, HAN, Zhengsheng, GAO, Dawei, ZHENG, Fulu
Published in YAKUGAKU ZASSHI (01.07.2007)
Published in YAKUGAKU ZASSHI (01.07.2007)
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A current reference with wide temperature operation range and low temperature drift
Ding, Liqiang, Cai, Xiaowu, Wang, Yang, Han, Zhengsheng, Li, Bo, Zhao, Fazhan
Published in Electronics letters (01.04.2022)
Published in Electronics letters (01.04.2022)
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Journal Article
Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics
Zhu, Maguang, Lu, Peng, Wang, Xuan, Chen, Qian, Zhu, Huiping, Zhang, Yajie, Zhou, Jianshuo, Xu, Haitao, Han, Zhengsheng, Han, Jianwei, Chen, Rui, Li, Bo, Peng, Lian‐Mao, Zhang, Zhiyong
Published in Small (Weinheim an der Bergstrasse, Germany) (01.01.2023)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.01.2023)
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Journal Article
A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
Wang, Kewei, Zhang, Xinyi, Li, Bo, Li, Duoli, Zhao, Fazhan, Bu, Jianhui, Han, Zhengsheng
Published in Electronics (Basel) (01.12.2022)
Published in Electronics (Basel) (01.12.2022)
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Journal Article
Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate
Chen, Weizhong, Li, Shun, Huang, Yao, Huang, Yi, Han, ZhengSheng
Published in IET power electronics (25.11.2020)
Published in IET power electronics (25.11.2020)
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Journal Article
Motion simulation and test on threshed grains in tapered threshing and transmission device for plot wheat breeding based on CFD-DEM
Dai, Fei, Song, Xuefeng, Zhao, Wuyun, Han, Zhengsheng, Zhang, Fengwei, Zhang, Shilin
Published in International journal of agricultural and biological engineering (2019)
Published in International journal of agricultural and biological engineering (2019)
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Journal Article
The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
Li, Mingzhu, Cai, Xiaowu, Zeng, Chuanbin, Li, Xiaojing, Ni, Tao, Wang, Juanjuan, Li, Duoli, Zhao, Fazhan, Han, Zhengsheng
Published in Electronics (Basel) (01.02.2022)
Published in Electronics (Basel) (01.02.2022)
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Journal Article
Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions
Li, Yangyang, Zeng, Chuanbin, Li, Xiaojing, Gao, Linchun, Yan, Weiwei, Li, Duoli, Zhang, Yi, Han, Zhengsheng, Luo, Jiajun
Published in Electronics (Basel) (01.04.2021)
Published in Electronics (Basel) (01.04.2021)
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Journal Article
Snapback-free RC-LIGBT with integrated LDMOS and LIGBT
Chen, Weizhong, Li, Shun, Huang, Yao, Huang, Yi, He, LiJun, Han, ZhengSheng
Published in Micro & nano letters (05.02.2020)
Published in Micro & nano letters (05.02.2020)
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