Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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Journal Article
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.09.2021)
Published in Japanese Journal of Applied Physics (01.09.2021)
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Journal Article
Effect of methane additive on GaN growth using the OVPE method
Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Corrigendum to “Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3” [Journal of Crystal Growth 350 (2012) 56–59]
Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.10.2012)
Published in Journal of crystal growth (01.10.2012)
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Journal Article
Group-III nitride substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 30.07.2024
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Year of Publication 30.07.2024
Patent
Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 24.10.2023
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Year of Publication 24.10.2023
Patent
GROUP-III NITRIDE SUBSTRATE
SUMI, Tomoaki, KITAMOTO, Akira, OKAYAMA, Yoshio, YOSHIMURA, Masashi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Year of Publication 12.10.2023
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Year of Publication 12.10.2023
Patent
Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 12.09.2023
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Year of Publication 12.09.2023
Patent
Group-III nitride substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 01.08.2023
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Year of Publication 01.08.2023
Patent
Group-III nitride substrate containing carbon at a surface region thereof
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 26.07.2022
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Year of Publication 26.07.2022
Patent
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
SUMI, Tomoaki, KITAMOTO, Akira, YOSHIMURA, Masashi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Year of Publication 24.02.2022
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Year of Publication 24.02.2022
Patent
METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
SUMI, Tomoaki, KITAMOTO, Akira, OKAYAMA, Yoshio, YOSHIMURA, Masashi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Year of Publication 06.01.2022
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Year of Publication 06.01.2022
Patent