Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model
Wulf, Ulrich, Kučera, Jan, Richter, Hans, Horstmann, Manfred, Wiatr, Maciej, Höntschel, Jan
Published in Mathematics (Basel) (22.11.2017)
Published in Mathematics (Basel) (22.11.2017)
Get full text
Journal Article
Spacer integration methods and resulting devices
PETER BAARS, GEORGE ROBERT MULFINGER, HONTSCHEL JAN, HANS-JURGEN THEES, RYAN SPORER, RICK J. CARTER
Year of Publication 01.12.2017
Get full text
Year of Publication 01.12.2017
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
THEES, Hans-Jürgen, MULFINGER, George Robert, SPORER, Ryan, BAARS, Peter, CARTER, Rick J, HÖNTSCHEL, Jan
Year of Publication 12.03.2020
Get full text
Year of Publication 12.03.2020
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Mulfinger, George Robert, Thees, Hans-Jürgen, Sporer, Ryan, Carter, Rick J, Baars, Peter, Höntschel, Jan
Year of Publication 31.12.2019
Get full text
Year of Publication 31.12.2019
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 11.01.2018
Get full text
Year of Publication 11.01.2018
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 16.11.2017
Get full text
Year of Publication 16.11.2017
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Thees Hans-Jürgen, Carter Rick J, Höntschel Jan, Sporer Ryan, Mulfinger George Robert, Baars Peter
Year of Publication 31.10.2017
Get full text
Year of Publication 31.10.2017
Patent