Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films
Schwinge, Caroline, Hoffmann, Raik, Hertel, Johannes, Wislicenus, Marcus, Gerlich, Lukas, Völklein, Friedemann, Gerlach, Gerald, Wagner-Reetz, Maik
Published in Review of scientific instruments (01.10.2023)
Published in Review of scientific instruments (01.10.2023)
Get full text
Journal Article
Bistable organic electrochemical transistors: enthalpy vs. entropy
Bongartz, Lukas M., Kantelberg, Richard, Meier, Tommy, Hoffmann, Raik, Matthus, Christian, Weissbach, Anton, Cucchi, Matteo, Kleemann, Hans, Leo, Karl
Published in Nature communications (09.08.2024)
Published in Nature communications (09.08.2024)
Get full text
Journal Article
300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applications
Potjan, Roman, Wislicenus, Marcus, Ostien, Oliver, Hoffmann, Raik, Lederer, Maximilian, Reck, André, Emara, Jennifer, Roy, Lisa, Lilienthal-Uhlig, Benjamin, Wosnitza, J.
Published in Applied physics letters (23.10.2023)
Published in Applied physics letters (23.10.2023)
Get full text
Journal Article
Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process
Hessler, Daniel, Olivo, Ricardo, Baldauf, Tim, Seidel, Konrad, Hoffmann, Raik, Woo, Chaiwon, Lederer, Maximilian, Raffel, Yannick
Published in Memories - Materials, Devices, Circuits and Systems (01.04.2024)
Published in Memories - Materials, Devices, Circuits and Systems (01.04.2024)
Get full text
Journal Article
Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles
Mart, Clemens, Kämpfe, Thomas, Hoffmann, Raik, Eßlinger, Sophia, Kirbach, Sven, Kühnel, Kati, Czernohorsky, Malte, Eng, Lukas M., Weinreich, Wenke
Published in Advanced electronic materials (01.03.2020)
Published in Advanced electronic materials (01.03.2020)
Get full text
Journal Article
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Sunil, Athira, Rana SK, Masud, Lederer, Maximilian, Raffel, Yannick, Müller, Franz, Olivo, Ricardo, Hoffmann, Raik, Seidel, Konrad, Kämpfe, Thomas, Chakrabarti, Bhaswar, De, Sourav
Published in Advanced intelligent systems (01.04.2024)
Published in Advanced intelligent systems (01.04.2024)
Get full text
Journal Article
Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage
Ali, Tarek, Kühnel, Kati, Olivo, Ricardo, Lehninger, David, Müller, Franz, Lederer, Maximilian, Rudolph, Matthias, Oehler, Sebastian, Mertens, Konstantin, Hoffmann, Raik, Zimmermann, Katrin, Schramm, Philipp, Metzger, Joachim, Binder, Robert, Czernohorsky, Malte, Kämpfe, Thomas, Seidel, Konrad, Müller, Johannes, Van Houdt, Jan, Eng, Lukas M.
Published in Electronic materials (Basel) (01.09.2021)
Published in Electronic materials (Basel) (01.09.2021)
Get full text
Journal Article
Ferroelectric FETs with Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio
Lehninger, David, Hoffmann, Raik, Sunbul, Ayse, Mahne, Hannes, Kampfe, Thomas, Bernert, Kerstin, Thiem, Steffen, Seidel, Konrad
Published in IEEE electron device letters (01.11.2022)
Published in IEEE electron device letters (01.11.2022)
Get full text
Journal Article
A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
Ali, Tarek, Mertens, Konstantin, Kühnel, Kati, Rudolph, Matthias, Oehler, Sebastian, Lehninger, David, Müller, Franz, Revello, Ricardo, Hoffmann, Raik, Zimmermann, Katrin, Kämpfe, Thomas, Czernohorsky, Malte, Seidel, Konrad, Van Houdt, Jan, Eng, Lukas M
Published in Nanotechnology (15.10.2021)
Published in Nanotechnology (15.10.2021)
Get full text
Journal Article
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Sünbül, Ayse, Lehninger, David, Hoffmann, Raik, Olivo, Ricardo, Prabhu, Aditya, Schöne, Fred, Kühnel, Kati, Döllgast, Moritz, Haufe, Nora, Roy, Lisa, Kämpfe, Thomas, Seidel, Konrad, Eng, Lukas M.
Published in Advanced engineering materials (01.02.2023)
Published in Advanced engineering materials (01.02.2023)
Get full text
Journal Article
Integration of ferroelectric devices for advanced in-memory computing concepts
Seidel, Konrad, Lehninger, David, Sünbül, Ayse, Hoffmann, Raik, Revello, Ricardo, Yadav, Nandakishor, Vardar, Alptekin, Landwehr, Matthias, Heinig, Andreas, Mähne, Hannes, Bernert, Kerstin, Thiem, Steffen, Kämpfe, Thomas, Lederer, Maximilian
Published in Japanese Journal of Applied Physics (01.05.2024)
Published in Japanese Journal of Applied Physics (01.05.2024)
Get full text
Journal Article
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
Sünbül, Ayse, Lehninger, David, Lederer, Maximilian, Mähne, Hannes, Hoffmann, Raik, Bernert, Kerstin, Thiem, Steffen, Schöne, Fred, Döllgast, Moritz, Haufe, Nora, Roy, Lisa, Kämpfe, Thomas, Seidel, Konrad, Eng, Lukas M.
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
Get full text
Journal Article
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer
Seidel, Konrad, Lehninger, David, Hoffmann, Raik, Ali, Tarek, Lederer, Maximilian, Revello, Ricardo, Mertens, Konstantin, Biedermann, Kati, Shen, Yukai, Wang, Defu, Landwehr, Matthias, Heinig, Andreas, Kampfe, Thomas, Mahne, Hannes, Bernert, Kerstin, Thiem, Steffen
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Get full text
Conference Proceeding
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2‑Based FeFETs for In-Memory-Computing Applications
Raffel, Yannick, De, Sourav, Lederer, Maximilian, Olivo, Ricardo Revello, Hoffmann, Raik, Thunder, Sunanda, Pirro, Luca, Beyer, Sven, Chohan, Talha, Kämpfe, Thomas, Seidel, Konrad, Heitmann, Johannes
Published in ACS applied electronic materials (22.11.2022)
Published in ACS applied electronic materials (22.11.2022)
Get full text
Journal Article
Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films
Ali, Tarek, Lehninger, David, Lederer, Maximilian, Li, Songrui, Kühnel, Kati, Mart, Clemens, Mertens, Konstantin, Hoffmann, Raik, Olivo, Ricardo, Emara, Jennifer, Biedermann, Kati, Metzger, Joachim, Binder, Robert, Czernohorsky, Malte, Kämpfe, Thomas, Müller, Johannes, Seidel, Konrad, Eng, Lukas M.
Published in Advanced electronic materials (01.05.2022)
Published in Advanced electronic materials (01.05.2022)
Get full text
Journal Article
Bistable Organic Electrochemical Transistors: Enthalpy vs. Entropy
Bongartz, Lukas M, Kantelberg, Richard, Meier, Tommy, Hoffmann, Raik, Matthus, Christian, Weissbach, Anton, Cucchi, Matteo, Kleemann, Hans, Leo, Karl
Published in arXiv.org (09.08.2024)
Published in arXiv.org (09.08.2024)
Get full text
Paper
Journal Article
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology
Lehninger, David, Mahne, Hannes, Ali, Tarek, Hoffmann, Raik, Olivo, Ricardo, Lederer, Maximilian, Mertens, Konstantin, Kampfe, Thomas, Biedermann, Kati, Landwehr, Matthias, Heinig, Andreas, Wang, Defu, Shen, Yukai, Bernert, Kerstin, Thiem, Steffen, Seidel, Konrad
Published in 2022 IEEE International Memory Workshop (IMW) (01.05.2022)
Published in 2022 IEEE International Memory Workshop (IMW) (01.05.2022)
Get full text
Conference Proceeding