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Published in Advanced materials (Weinheim) (18.06.2013)
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Published in Nature communications (16.04.2013)
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USE OF CENTROSYMMETRIC MOTT INSULATORS IN A RESISTIVELY SWITCHED MEMORY FOR STORING DATA
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators
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Published in arXiv.org (20.09.2013)
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Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators
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Year of Publication 17.04.2013
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Use of Centrosymmetric Mott Insulators in a Resistive Switched Memory for Storing Data
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Year of Publication 10.09.2015
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USE OF CENTROSYMMETRIC MOTT INSULATORS IN A RESISTIVELY SWITCHED MEMORY FOR STORING DATA
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Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations
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Electric pulse induced electronic patchwork in the Mott insulator GaTa\(_{4}\)Se\(_{8}\)
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Published in arXiv.org (29.04.2013)
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Resistive switching induced by electronic avalanche breakdown in GaTa\(_4\)Se\(_{8-x}\)Te\(_x\) narrow gap Mott Insulators
Guiot, Vincent, Cario, Laurent, Janod, Etienne, Corraze, Benoit, Vinh Ta Phuoc, Rozenberg, Marcelo, Stoliar, Pablo, Cren, Tristan, Roditchev, Dimitri
Published in arXiv.org (17.04.2013)
Published in arXiv.org (17.04.2013)
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USE OF CENTROSYMMETRIC MOTT INSULATORS IN A RESISTIVELY SWITCHED MEMORY FOR STORING DATA
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Year of Publication 17.10.2013
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