(Invited) Thin Epitaxial Film of Ge and III-V Directly Bonded onto Si Substrate
Maeda, Tatsuro, Mieda, Eiko, Ishii, Hiroyuki, Itatani, Taro, Hattori, H, Yasuda, Tetsuji, Maeda, Atsuhiko, Kurashima, Yuichi, Takagi, Hideki, Aoki, T, Yamamoto, T, Ichikawa, Osamu, Osada, T, Takada, T, Hata, Masahiko, Yugami, J, Ogawa, A, Kikuchi, T, Kunii, Y
Published in ECS Transactions (12.08.2014)
Published in ECS Transactions (12.08.2014)
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Journal Article
Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM
Ono, S, Yamane, M, Katakami, A, Yugami, J, Koguchi, M, Ogasawara, M, Miyakawa, M, Kakibayashi, H, Ohji, Y
Published in Microscopy and microanalysis (01.07.2009)
Published in Microscopy and microanalysis (01.07.2009)
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Journal Article
Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks
Kawahara, T., Nishida, Y., Sakashita, S., Mizutani, M., Inoue, M., Yamanari, S., Higashi, M., Hayashi, T., Murata, N., Honda, K., Yugami, J., Yoshimura, H., Yoneda, M.
Published in IEEE electron device letters (01.10.2007)
Published in IEEE electron device letters (01.10.2007)
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Journal Article
Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics
Tsujikawa, S., Mine, T., Watanabe, K., Shimamoto, Y., Tsuchiya, R., Ohnishi, K., Onai, T., Yugami, J., Kimura, S.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
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Conference Proceeding
Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region
Morooka, T, Sato, M, Matsuki, T, Suzuki, T, Shiraishi, K, Uedono, A, Miyazaki, S, Ohmori, K, Yamada, K, Nabatame, T, Chikyow, T, Yugami, J, Ikeda, K, Ohji, Y
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories
Kawahara, T., Kobayashi, T., Jyouno, Y., Saeki, S.-i., Miyamoto, N., Adachi, T., Kato, M., Sato, A., Yugami, J., Kume, H., Kimura, K.
Published in IEEE Journal of Solid-State Circuits (01.11.1996)
Published in IEEE Journal of Solid-State Circuits (01.11.1996)
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Journal Article
Advantages of gate work-function engineering by incorporating sub-monolayer Hf at SiON/poly-Si interface in low-power CMOS
Shimamoto, Y., Yugami, J., Inoue, M., Mizutani, M., Hayashi, T., Shiga, K., Fujita, F., Yoneda, M., Matsuoka, H.
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
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Conference Proceeding
Significant improvement in reliability of HfSiON gate insulator
Inoue, M., Yugami, J., Fujita, T., Shiga, K., Mizutani, M., Nomura, K., Tsuchimoto, J., Ohno, Y., Yoneda, M.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
True influence of wafer-backside copper contamination during the back-end process on device characteristics
Hozawa, K., Miyazaki, H., Yugami, J.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
Journal Article
VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers
Hiraiwa, A., Yugami, J., Ihjima, S., Kusaka, T., Ohji, Y.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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Journal Article
Band offsets and chemical bonding states in N-plasma-treated HfSiONgate stacks studied by photoelectron spectroscopy and x-rayabsorption spectroscopy
Oshima, M., Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Inoue, M., Mizutani, M., Yugami, J.
Published in Journal of applied physics (07.08.2006)
Published in Journal of applied physics (07.08.2006)
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Journal Article
Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics
Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tsujikawa, Shimpei, Hamamura, Hirotaka, Tonomura, Osamu, Mine, Toshiyuki, Hisamoto, Digh, Onai, Takahiro, Yugami, Jiro, Hiratani, Masahiko, Kimura, Shin’ichiro
Published in Applied physics letters (23.02.2004)
Published in Applied physics letters (23.02.2004)
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Journal Article
Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy
Oshima, M., Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Inoue, M., Mizutani, M., Yugami, J.
Published in Journal of applied physics (01.08.2006)
Published in Journal of applied physics (01.08.2006)
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Journal Article
Evaluation of mobility in the MOSFET with high leakage current
Tonomura, O., Shimamoto, Y., Torii, K., Hiratani, M., Saito, S., Yugami, J.
Published in International Conference on Microelectronic Test Structures, 2003 (2003)
Published in International Conference on Microelectronic Test Structures, 2003 (2003)
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Conference Proceeding