Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
Flachowsky, Stefan, Wei, Andy, Illgen, Ralf, Herrmann, Tom, Höntschel, Jan, Horstmann, Manfred, Klix, Wilfried, Stenzel, Roland
Published in IEEE Transactions on Electron Devices (01.06.2010)
Published in IEEE Transactions on Electron Devices (01.06.2010)
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Journal Article
Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model
Wulf, Ulrich, Kučera, Jan, Richter, Hans, Horstmann, Manfred, Wiatr, Maciej, Höntschel, Jan
Published in Mathematics (22.11.2017)
Published in Mathematics (22.11.2017)
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Journal Article
Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction
Hähnel, Angelika, Reiche, Manfred, Moutanabbir, Oussama, Blumtritt, Horst, Geisler, Holm, Höntschel, Jan, Engelmann, Hans-Jürgen
Published in Microscopy and Microanalysis (01.02.2012)
Published in Microscopy and Microanalysis (01.02.2012)
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Journal Article
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
Illgen, Ralf, Flachowsky, Stefan, Herrmann, Tom, Klix, Wilfried, Stenzel, Roland, Feudel, Thomas, Höntschel, Jan, Horstmann, Manfred
Published in Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (01.01.2010)
Published in Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (01.01.2010)
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Journal Article
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Flachowsky, Stefan, Illgen, Ralf, Herrmann, Tom, Klix, Wilfried, Stenzel, Roland, Ostermay, Ina, Naumann, Andreas, Wei, Andy, Höntschel, Jan, Horstmann, Manfred
Published in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena (01.01.2010)
Published in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena (01.01.2010)
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Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
Herrmann, Tom, Flachowsky, Stefan, Illgen, Ralf, Klix, Wilfried, Stenzel, Roland, Höntschel, Jan, Feudel, Thomas, Horstmann, Manfred
Published in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena (01.01.2010)
Published in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena (01.01.2010)
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Journal Article
Spacer integration methods and resulting devices
PETER BAARS, GEORGE ROBERT MULFINGER, HONTSCHEL JAN, HANS-JURGEN THEES, RYAN SPORER, RICK J. CARTER
Year of Publication 01.12.2017
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Year of Publication 01.12.2017
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
THEES, Hans-Jürgen, MULFINGER, George Robert, SPORER, Ryan, BAARS, Peter, CARTER, Rick J, HÖNTSCHEL, Jan
Year of Publication 12.03.2020
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Year of Publication 12.03.2020
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Mulfinger, George Robert, Thees, Hans-Jürgen, Sporer, Ryan, Carter, Rick J, Baars, Peter, Höntschel, Jan
Year of Publication 31.12.2019
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Year of Publication 31.12.2019
Patent