An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
Chen, Weizhong, Mou, Liuting, Qin, Haifeng, Zhang, Hongsheng, Han, Zhengsheng
Published in Chinese physics B (01.05.2023)
Published in Chinese physics B (01.05.2023)
Get full text
Journal Article
A FIN-LDMOS with Bulk Electron Accumulation Effect
Chen, Weizhong, Duan, Zubing, Zhang, Hongsheng, Han, Zhengsheng, Wang, Zeheng
Published in Micromachines (Basel) (10.06.2023)
Published in Micromachines (Basel) (10.06.2023)
Get full text
Journal Article
Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects
Wei, Zikai, Chen, Weizhong, Wang, Haishi, Qin, Haifeng, Han, Zhengsheng
Published in JOURNAL OF POWER ELECTRONICS (01.04.2024)
Published in JOURNAL OF POWER ELECTRONICS (01.04.2024)
Get full text
Journal Article
A lateral superjunction SOI LDMOS with double-conductive channels
Chen, Weizhong, Qin, Haifeng, Lin, Xuwei, Huang, Yi, Han, Zhengsheng
Published in JOURNAL OF POWER ELECTRONICS (01.04.2022)
Published in JOURNAL OF POWER ELECTRONICS (01.04.2022)
Get full text
Journal Article
Three-Dimensional TID Hardening Design for 14 nm Node SOI FinFETs
Lu, Peng, Yang, Can, Li, Yifei, Li, Bo, Han, Zhengsheng
Published in Eng (Basel, Switzerland) (01.12.2021)
Published in Eng (Basel, Switzerland) (01.12.2021)
Get full text
Journal Article
A snapback-free reverse-conducting IGBT with multiple extraction channels
Chen, Weizhong, Lin, Xuwei, Li, Shun, Huang, Yao, Huang, Yi, Han, Zhengsheng
Published in JOURNAL OF POWER ELECTRONICS (01.02.2022)
Published in JOURNAL OF POWER ELECTRONICS (01.02.2022)
Get full text
Journal Article
The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction
Chen, Weizhong, He, Lijun, Han, Zhengsheng, Huang, Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Get full text
Journal Article
A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops
Duoli, Li, Chuanbin, Zeng, Wei, Dou, Linchun, Gao, Weiwei, Yan, Bo, Li, Yang, Huang, Tao, Liu, Long, Xing, Hainan, Liu, Jiajun, Luo, Zhengsheng, Han
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
Get full text
Journal Article
Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies
Zhang, Zhangang, Liu, Jie, Hou, Mingdong, Gu, Song, Liu, Tianqi, Zhao, Fazhan, Geng, Chao, Xi, Kai, Sun, Youmei, Yao, Huijun, Luo, Jie, Duan, Jinglai, Mo, Dan, Liu, Gang, Han, Zhengsheng, En, Yunfei
Published in IEEE transactions on nuclear science (01.06.2014)
Published in IEEE transactions on nuclear science (01.06.2014)
Get full text
Journal Article
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells
Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Get full text
Conference Proceeding
Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs
Jinshun Bi, Reed, R. A., Schrimpf, R. D., Fleetwood, D. M., Zhengsheng Han
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Get full text
Conference Proceeding