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Search Results - "Pole-Shang Lin"
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"Pole-Shang Lin"
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On the pseudo-subthreshold characteristics of polycrystalline-silicon thin-film transistors with large grain size
by
Li, T.-S.
,
Lin, P.-S.
Published in
IEEE electron device letters
(01.05.1993)
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The impact of scaling-down oxide thickness on poly-Si thin-film transistors' I-V characteristics
by
Lin, Pole-Shang
,
Li, To-Sing
Published in
IEEE electron device letters
(01.04.1994)
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A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors
by
Lin, P.-S.
,
Guo, J.-Y.
,
Wu, C.-Y.
Published in
IEEE transactions on electron devices
(01.03.1990)
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A new method to determine the work-function difference and its application to calibrate the boron-segregation coefficient
by
Lin, Pole-Shang
,
Chang, Chia-Haur
Published in
IEEE electron device letters
(01.11.1991)
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The improvement of short-channel effects due to oxidation-induced boron redistribution for counter-implantation p-MOSFET's
by
Perng, R.-K.
,
Lin, P.-S.
Published in
IEEE electron device letters
(01.05.1993)
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A new methodology for developing a fast two-dimensional MOSFET device simulator
by
Perng, Ruey-Kuen
,
Lin
,
Pole
-
Shang
,
Wu, Ching-Yuan
Published in
Solid-state electronics
(1991)
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A new simplified two-dimensional model for the threshold voltage of MOSFET's with nonuniformly doped substrate
by
Pole
-
Shang Lin
,
Ching-Yuan Wu
Published in
IEEE transactions on electron devices
(01.06.1991)
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A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modeling
by
Lin, P-S
,
Wu, C-Y
Published in
IEEE transactions on electron devices
(01.09.1987)
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Performance and reliability evaluation of high dielectric LDD spacer on deep sub-micrometer LDD MOSFET
by
Jyh-Chyurn Guo
,
Chih-Yuan Lu
,
Hsu, C.C.-H.
,
Pole-Shan Lin
,
Chung, S.S.-S.
Published in
IEEE transactions on electron devices
(01.07.1994)
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