Search Results - "CHEN, EUGENE YOUJUN" :: K.UTB vyhledávací portál

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MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS

by CHEN EUGENE YOUJUN, TANG XUETI
Year of Publication 17.12.2013

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MAGNETIC ELEMENT WITH DUAL MAGNETIC STATES AND FABRICATING METHOD THEREOF

by DEHERRERA MARK, TEHRANI SAIED N, SLAUGHTER JON MICHAEL, DURLAM MARK, CHEN EUGENE YOUJUN
Year of Publication 07.07.2001

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Magnetic element having perpendicular anisotropy with enhanced efficiency

by CHEN EUGENE YOUJUN, WANG SHENGYUAN
Year of Publication 04.06.2013

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Three terminal magnetic element

by APALKOV DMYTRO, CHEN EUGENE YOUJUN
Year of Publication 26.03.2013

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Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency

by CHEN EUGENE YOUJUN, WANG SHENGYUAN
Year of Publication 29.03.2012

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METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS

by WATTS, STEVEN M, LOTTIS, DANIEL, CHEN, EUGENE YOUJUN, TANG, XUETI
Year of Publication 20.01.2016

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Current driven memory cells having enhanced current and enhanced current symmetry

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 07.09.2010

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METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS

by WATTS, STEVEN M, LOTTIS, DANIEL, CHEN, EUGENE YOUJUN, TANG, XUETI
Year of Publication 27.08.2014

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CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 27.08.2009

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Magnetic element with an improved magnetoresistance ratio and fabricating method thereof

by CHEN, EUGENE YOUJUN
Year of Publication 21.10.2006

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Current driven memory cells having enhanced current and enhanced current symmetry

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 07.04.2009

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METHOD AND SYSTEM FOR PROVIDING A MAGNETIC ELEMENT AND MAGNETIC MEMORY BEING UNIDIRECTIONAL WRITING ENABLED

by CHEN, EUGENE, YOUJUN, APALKOV, DMYTRO
Year of Publication 18.12.2008

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Magnetic element utilizing free layer engineering

by HUAI YIMING, DIAO ZHITAO, CHEN EUGENE YOUJUN
Year of Publication 29.03.2011

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Current driven memory cells having enhanced current and enhanced current symmetry

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 28.08.2008

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METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS

by WATTS, STEVEN M, LOTTIS, DANIEL, CHEN, EUGENE YOUJUN, TANG, XUETI
Year of Publication 22.05.2013

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Magnetic element utilizing free layer engineering

by HUAI YIMING, DIAO ZHITAO, CHEN EUGENE YOUJUN
Year of Publication 20.07.2010

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Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 23.10.2007

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Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 18.09.2007

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Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

by CHEN EUGENE YOUJUN, HUAI YIMING
Year of Publication 18.09.2007

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Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer

by CHEN EUGENE YOUJUN
Year of Publication 15.06.2004

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Patent

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