BIPOLAR TRANSISTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE
STRICKER ANDREAS D, DAHLSTROM MATTIAS E, GRAY PETER B, HERRIN RUSSELL T, HARAME DAVID L, CAMILLO CASTILLO RENATA, JOSEPH ALVIN J
Year of Publication 17.01.2013
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Year of Publication 17.01.2013
Patent
RF linearity characteristics of SiGe HBTs
Guofu Niu, Qingqing Liang, Cressler, J.D., Webster, C.S., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
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Journal Article
SiGe heterojunctions: devices and applications
Arienzo, Maurizio, Comfort, James H., Crabbé, Emmanuel F., Harame, David L., Iyer, Subramanian S., Kesan, Vijay P., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C., Sun, Yuan-Chen
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
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Journal Article
Conference Proceeding
1/f noise in proton-irradiated SiGe HBTs
Zhenrong Jin, Guofu Niu, Cressler, J.D., Marshall, C.J., Marshall, P.W., Kim, H.S., Reed, R.A., Harame, D.L.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
Substrate current based avalanche multiplication measurement in 120 GHz SiGe HBTs
Jun Pan, Guofu Niu, Jin Tang, Yun Shi, Joseph, A.J., Harame, D.L.
Published in IEEE electron device letters (01.12.2003)
Published in IEEE electron device letters (01.12.2003)
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Journal Article